Zobrazeno 1 - 10
of 139
pro vyhledávání: '"T.F. Meister"'
Publikováno v:
IEEE Transactions on Electron Devices. 43:1533-1538
The RF noise of transistors fabricated in an advanced silicon bipolar technology is investigated. The influence of the lateral scaling on the noise figure is studied experimentally and compared with the predictions of conventional noise modeling. Rea
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4ff5bff55bf16907347f366687fe024b
https://doi.org/10.1109/16.535346
https://doi.org/10.1109/16.535346
Publikováno v:
Microelectronic Engineering. 19:535-538
The performance limits of self-aligned npn Si-BJTs and SiGe-HBTs are investigated for different types of processing. Using a one-dimensional drift-diffusion equation solver, device simulations are carried out for different doping and germanium profil
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fa10ce96f2c19d773686f29dfacf3127
https://doi.org/10.1016/0167-9317(92)90490-i
https://doi.org/10.1016/0167-9317(92)90490-i
Autor:
M. Wurzer, T. Bottner, K. Aufinger, R. Stengl, Herbert Knapp, J. Bock, T.F. Meister, S. Boguth, H. Schafer, W. Perndl
Publikováno v:
IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004..
A SiGe bipolar technology with a transit frequency of 225 GHz and a maximum oscillation frequency of 300 GHz is described. With a ring oscillator gate delay of 3.3 ps and a static frequency divider operating up to 102 GHz input frequency state-of-the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::41dbb9542fa0b080f268ac56798541cb
https://doi.org/10.1109/iedm.2004.1419124
https://doi.org/10.1109/iedm.2004.1419124
Publikováno v:
31st European Conference on Optical Communications (ECOC 2005).
A 0.18 μm SiGe HBT based linear equalizer for 43 Gbit/s transmission has been realised showing an improvement of 60% of polarisation mode dispersion (PMD) DGD tolerance and of 50% of chromatic dispersion (CD) tolerance. (2 pages)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ab3fec44e9883c8c5244286cab6f975e
https://doi.org/10.1049/cp:20050504
https://doi.org/10.1049/cp:20050504
Autor:
M. Ohnemus, S. Boguth, R. Schreiter, T.F. Meister, J. Bock, L. Treitinger, M. Rest, M. Wurzer, Herbert Knapp, K. Aufinger
Publikováno v:
International Electron Devices Meeting 1999. Technical Digest (Cat. No.99CH36318).
A production-near implanted base silicon bipolar technology for mixed analogue and digital applications has been developed. The applicability for mobile communications up to at least 6 GHz and for high-speed data links in the range of 10-40 Gbit/s is
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f03fc5c32d93d052e4c588143d22cd63
https://doi.org/10.1109/iedm.1999.824214
https://doi.org/10.1109/iedm.1999.824214
Publikováno v:
Proceedings of the Bipolar Circuits and Technology Meeting.
A modular 1.2- mu m BiCMOS process which can be used to realize either low-cost or high-performance bipolar devices within a CMOS environment is discussed. process complexity, electrical data, and circuit performance are compared for different circui
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a27c5b1a7639549bc678837302cb8e9b
https://doi.org/10.1109/bipol.1989.69486
https://doi.org/10.1109/bipol.1989.69486
Autor:
H. Schaber, T.F. Meister
Publikováno v:
Proceedings of the Bipolar Circuits and Technology Meeting.
Basic models proposed to explain the polysilicon emitter effect are reviewed, and the present status of polysilicon emitter modeling is summarized. The present state of the technology is described, and its advantages are discussed. Optimization of fo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0a976c22b2f118f2cfb2f8272947baa9
https://doi.org/10.1109/bipol.1989.69463
https://doi.org/10.1109/bipol.1989.69463
Autor:
J. Bok, A. Felder, T.F. Meister, M. Franosch, K. Aufinger, M. Wurzer, R. Schreiter, S. Boguth, L. Treitinger
Publikováno v:
1996 Symposium on VLSI Technology. Digest of Technical Papers.
A 0.5 /spl mu/m silicon bipolar technology for mixed digital/analogue RF applications is presented. Very steep base profiles are realized by ion implantation and subsequent base diffusion. Cut-off frequencies and maximum oscillation frequencies of 50
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4a81981ec319c8041d9633fa0e5f1de4
https://doi.org/10.1109/vlsit.1996.507812
https://doi.org/10.1109/vlsit.1996.507812
Publikováno v:
International Electron Devices Meeting 1991 [Technical Digest].
The authors present a 0.8 mu m BiCMOS technology for high-performance digital applications. The underlying optimization strategy to trade off both bipolar vs. CMOS speed and cutoff-frequency vs. collector-emitter breakdown voltage is described. Based
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3f434e2f7c0480faed9fb812132adf4b
https://doi.org/10.1109/iedm.1991.235417
https://doi.org/10.1109/iedm.1991.235417
Publikováno v:
International Technical Digest on Electron Devices.
Using transistors with opaque polysilicon-emitters, the apparent bandgap narrowing in heavily doped n-type silicon has been measured with a temperature-dependent DC method. Collector currents and forward transit times of polysilicon-emitter transisto
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::56e5cf4945ba986e6cd9eaec8c8ebd6d
https://doi.org/10.1109/iedm.1990.237156
https://doi.org/10.1109/iedm.1990.237156