Zobrazeno 1 - 10
of 104
pro vyhledávání: '"T.F. Huang"'
Autor:
Hyeong Jun Ahn, Christina Arnett, Thomas T. F. Huang, Yousuf Harun, Brienne Walker, Aaron T. Ohta, Christopher T.F. Huang, Thomas S. Kosasa, Chelsea Yin
Publikováno v:
Reproductive BioMedicine Online. 42:1075-1085
Research question Can artificial intelligence (AI) discriminate a blastocyst's cellular area from unedited time-lapse image files using semantic segmentation and a deep learning optimized U-Net architecture for use in selecting single blastocysts for
Publikováno v:
Reproductive biomedicine online. 39(1)
Research question How can the kinetics of human blastocyst expansion be used to evaluate an embryo's ploidy identified using preimplantation genetic testing for aneuploidy (PGT-A)? Design This was a retrospective observational study of 188 autologous
Publikováno v:
Fertility and Sterility. 110:e402
Akademický článek
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Publikováno v:
Gynecologic Oncology. 85:511-516
Objective. Sperm DNA undergoes apoptotic fragmentation when exposed to HPV DNA. Details of the specific gene regions targeted by HPV in sperm are lacking. The objective of this study was to determine the integrity of exons 5 and 8 of the p53 gene in
Publikováno v:
Biology of Reproduction. 64:451-456
The signal initiating ovarian theca cell (TC) differentiation is gonadotropin independent because theca precursor cells do not contain LH receptors. Previously we demonstrated that preantral follicles produce paracrine TC differentiating factors that
Publikováno v:
Journal of Crystal Growth. 200:362-367
Epitaxial GaN films have been grown on c-cut sapphire substrates by pulsed laser deposition (PLD) using a KrF laser. The properties of GaN films were improved by increasing the growth temperature to 800°C and the nitrogen pressure during growth to 1
Autor:
Heon Ju Lee, James S. Harris, Kunio Itoh, Tetsuzo Ueda, T.F. Huang, Takaaki Baba, S.G. Spruytte, M. Yuri
Publikováno v:
Journal of Crystal Growth. 187:340-346
Vapor phase epitaxy (VPE) is a promising method to produce GaN substrates due to its high growth rate. In this paper, we first describe ZnO buffer layer deposition by pulsed laser deposition (PLD) on sapphire substrates for subsequent GaN VPE growth.
Autor:
J.R. Sheu, T.F. Huang
Publikováno v:
Journal of Biomedical Science. 3:359-364
Publikováno v:
IEEE Conference Record - Abstracts. 1999 IEEE International Conference on Plasma Science. 26th IEEE International Conference (Cat. No.99CH36297).
Summary form only given. In this study, we compare the characteristics of a microwave-driven and magnetically-enhanced inductively coupled NF/sub 3/ discharge. Optical emission spectroscopy, quadrupole mass spectroscopy, Fourier transform infrared an