Zobrazeno 1 - 10
of 54
pro vyhledávání: '"T.D. Linton"'
Publikováno v:
IEEE Transactions on Electron Devices. 39:843-850
Device simulation is used to investigate three-dimensional effects in small electrically erasable programmable read-only memory (EEPROM) cells. Threshold voltage, tunnel currents, write speed, and the effects of misregistration are characterized for
Publikováno v:
COMPEL - The international journal for computation and mathematics in electrical and electronic engineering. 10:573-588
Challenges to a robust and accurate implementation of electric‐field‐enhanccd thermal‐generation mechanisms in a drift‐diffusion‐based semiconductor‐device simulation code are discussed and solutions proposed. The implementation of the ph
Autor:
E.M. Buturla, D.P. Foty, Massimo V. Fischetti, J.B. Johnson, Stephen S. Furkay, James A. Slinkman, Steven E. Laux, K. Varahramyan, J. A. Mandelman, A.W. Strong, T.D. Linton, Daniel C. Cole, Orest Bula, F. Pileggi, D. Katcoff, J.W. Park, H.G. Lustig, P.E. Cottrell
Publikováno v:
Solid-State Electronics. 33:591-623
An overview is presented on the types of problems encountered in semiconductor technology development that are actively studied today via simulation methods. Most of the simulation examples presented here are ones that have been explicitly used in ac
Autor:
P.A. Blakey, T.D. Linton
Publikováno v:
IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits, 1987. Proceedings..
1. INTRODUmON The design of nonlinear transit-time microwave and millimeter-wave semiconductor diodes (such as IMPA?T’s) is often based on simple scaling ideas, sometimes assisted by large-signal time-domain computer simulation. It is often found t
Publikováno v:
International Technical Digest on Electron Devices.
A quasi-classical generation formulation is analytically developed for heavily doped silicon where electric field phenomena are important. This quasi-classical formalism is suitable for modeling thermal and electric field-dependent leakage mechanisms
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Publikováno v:
IEEE Transactions on Electron Devices. 35:405-413
A small-signal analysis of quantum-well oscillators is presented. The analysis includes the transit-time effects associated with a depleted spacer layer outside the quantum well. These transit-time effects are found to dominate device characteristics
Publikováno v:
IFAC Proceedings Volumes. 9:401-408
Publikováno v:
International Journal of Control. 23:197-206
Conditions guaranteeing stability of the optimal surely locally unbiased decentralized filter are derived and it is shown that the filter preserves the decentralized stabilizability of the system. It is also shown that the performance loss due to dec
Publikováno v:
IFAC Proceedings Volumes. 11:1367-1372
This paper considers the design of state estimation algorithms for large-scale interconnected systems for which it is not feasible to obtain complete measurements of the system interactions. Two design techniques are presented for a specific filterin