Zobrazeno 1 - 10
of 45
pro vyhledávání: '"T.D. Happ"'
Publikováno v:
IEEE Transactions on Electron Devices. 58:664-671
A study is conducted to investigate the relative advantages of different driving devices for phase-change memory cells using 3-D numerical device simulation. Among various possible choices, p-n diodes and vertical gate-all-around (GAA) metal-oxide-se
Publikováno v:
Optical and Quantum Electronics. 34:91-99
2D triangular photonic crystals (PCs) have been integrated as laser mirrors in electrically pumped InGaAs/AlGaAs ridge waveguide lasers. The investigated PC lattice constants range from 160 to 400 nm with light incident along both main symmetry direc
Publikováno v:
Optical and Quantum Electronics. 34:1137-1144
The monolithic combination of active light sources with photonic crystal (PC) waveguide components is a key building block for future highly integrated photonic circuits. We demonstrate the coupling of light from an InGaAs/AlGaAs ridge waveguide lase
Publikováno v:
IEE Proceedings - Optoelectronics. 148:183-187
Compact, high performance light sources are a key building block for future use in highly integrated photonic circuits. We have fabricated inplane emitting InP-based microlasers with cavity lengths of 600-100 /spl mu/m. The required high reflectivity
Publikováno v:
Semiconductor Science and Technology. 16:227-232
Ridge waveguide lasers with an integrated 2D photonic crystal (PC) mirror have been successfully fabricated on an InGaAs/AlGaAs laser structure emitting around 995 nm. The investigated 2D PCs consist of air holes in a semiconductor arranged in a tria
Publikováno v:
Applied Physics Letters. 79:4091-4093
We report the fabrication of short-cavity lasers with highly reflective two-dimensional photonic crystal mirrors on an InGaAsP/InP laser structure emitting at 1.57 μm. An intracavity photonic crystal mirror creates two coupled cavities, which provid
Autor:
Shih-Hung Chen, T.D. Happ, B. Yee, Hsiang-Lan Lung, Shoaib Hasan Zaidi, Eric A. Joseph, Matthew J. Breitwisch, R. Bergmann, Chung H. Lam, S. Raoux, A.G. Schrott, Y. Zhu, C.-F. Chen, R. Dasaka
Publikováno v:
2008 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA).
In this paper, a detailed study on the etching characteristics of nitrogen doped Ge2Sb2Te5 (N:GST) thin films is performed to elucidate the relationship between pattern fidelity and material modification. Multiple methodologies ranging from physical
Autor:
Mansun Chan, Bipin Rajendran, Hsiang-Lan Lung, Chung H. Lam, R.M.Y. Ng, T.D. Happ, Kailiang Lu
Publikováno v:
2008 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA).
In this work, a compact physical model with diode access devices for PCM technology is developed and verified with extensive 2-D and 3-D device simulations. The choice of design parameters allows the operation of the diode access device to serve as a
Autor:
Bernhard Ruf, R. Bergmann, Christian Rüster, Dieter Andres, Petra Majewski, Jan Boris Philipp, Michael Kund, T.D. Happ
Publikováno v:
2008 9th Annual Non-Volatile Memory Technology Symposium (NVMTS).
This paper analyzes the crystallization statistics and optimizes the performance of complex doped GST on 256 kb memory arrays in 180 nm CMOS technology. A novel method of deriving an optimized SET strategy from the RESET current distribution is devel
Autor:
T.D. Happ, J.B. Phipp, Min Yang, S. Raoux, R. Cheek, A.G. Schrott, Shoaib Hasan Zaidi, Y. Zhu, Y.-C. Chen, M. Lamorey, Hsiang-Lan Lung, T. Nirschl, Ming-Hsiu Lee, Bipin Rajendran, Matthew J. Breitwisch, R. Bergmann, C.-F. Chen, Geoffrey W. Burr, Chung H. Lam, Shih-Hung Chen, Eric A. Joseph
Publikováno v:
2007 IEEE International Electron Devices Meeting.
We discuss novel multi-level write algorithms for phase change memory which produce highly optimized resistance distributions in a minimum number of program cycles. Using a novel integration scheme, a test array at 4 bits/cell and a 32 kb memory page