Zobrazeno 1 - 10
of 58
pro vyhledávání: '"T.C.L.G. Sollner"'
Autor:
L.J. Mahoney, R. H. Mathews, C.L. Chen, J.P. Sage, T.C.L.G. Sollner, P.A. Maki, C. D. Parker, S.D. Calawa, K.M. Molvar
Publikováno v:
Solid-State Electronics. 44:1853-1856
Monolithic resonant-tunneling-diode (RTD) relaxation oscillators are fabricated. The highest repetition rate of this pulse generator is 6.7 GHz with a pulse width of approximately 60 ps. Oscillators with an RTD connected to an off-chip transmission l
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::db9686fd960b2b7471f406b381909031
https://doi.org/10.1016/s0038-1101(00)00105-2
https://doi.org/10.1016/s0038-1101(00)00105-2
Autor:
Chang-Lee Chen, P.A. Maki, S.D. Calawa, J.P. Sage, T.C.L.G. Sollner, R. H. Mathews, L.J. Mahoney, K.M. Molvar
Publikováno v:
Proceedings of the IEEE. 87:596-605
We describe a new family of clocked logic gates based on the resonant-tunneling diode (RTD). Pairs of RTDs form storage latches, and these are connected by networks consisting of field-effect transistors (FETs), saturated resistors, and RTDs. The des
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8090256068af36d5a5bac06230ad3d31
https://doi.org/10.1109/5.752517
https://doi.org/10.1109/5.752517
Autor:
R. H. Mathews, C. L. Chen, L.J. Mahoney, K.M. Molvar, P.A. Maki, S.D. Calawa, J.P. Sage, T.C.L.G. Sollner
Publikováno v:
Applied Physics Letters. 74:4058-4060
Device-quality layers were regrown on GaAs wafers by molecular-beam epitaxy over conductive pregrown areas and on selectively patterned high-resistivity areas formed by oxygen implantation. The regrowth over both areas resulted in comparable device-q
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::64218fce0171f8839718210432977745
https://doi.org/10.1063/1.123260
https://doi.org/10.1063/1.123260
Autor:
L.J. Mahoney, R. H. Mathews, C.L. Chen, K.M. Molvar, P.A. Maki, S.D. Calawa, J.P. Sage, T.C.L.G. Sollner
Publikováno v:
IEEE Electron Device Letters. 19:478-480
A novel technique of integrating resonant-tunneling diodes (RTDs) with pseudomorphic high-electron-mobility transistors (pHEMTs) is demonstrated. A proton was implanted through the pHEMT layers to convert the RTD structure underneath to a high-resist
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0c34596481460acae86dd6b559225ff9
https://doi.org/10.1109/55.735752
https://doi.org/10.1109/55.735752
Autor:
C.L. Chen, L.J. Mahoney, G.L. Fitch, J.P. Sage, T.C.L.G. Sollner, K.M. Molvar, R. H. Mathews, P.A. Maki
Publikováno v:
IEEE Electron Device Letters. 18:489-491
Resonant-tunneling diodes (RTDs) with a new planar configuration have been fabricated with a new self-aligned process that is compatible with that of silicon integrated-circuits technology. The size of the RTD is determined by a shallow boron implant
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a4a1fb8fdc8d0dbdad587b5f9a7c3dcb
https://doi.org/10.1109/55.624927
https://doi.org/10.1109/55.624927
Autor:
T.C.L.G. Sollner
Publikováno v:
IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits, 1987. Proceedings..
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6de7277220d2dce0f27517f596f1e894
https://doi.org/10.1109/cornel.1987.721244
https://doi.org/10.1109/cornel.1987.721244
Autor:
T.C.L.G. Sollner
Publikováno v:
12th Annual Symposium on Gallium Arsenide Integrated Circuit (GaAs IC).
Resonant-tunneling diodes (RTDs) have demonstrated oscillation frequencies above 400 GHz and switching speeds of 2 ps, establishing them as the fastest all-electronic switches at room temperature. This high speed, together with reasonable impedance l
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d04f6646b8ff3906a7c89760af17180b
https://doi.org/10.1109/gaas.1990.175435
https://doi.org/10.1109/gaas.1990.175435
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 29:87-91
Superconducting tunnel junctions have been used as the nonlinear element for mixing at a signal frequency of 115 GHz. The experimental results are compared with predictions of a theoretical analysis based on the quantum theory of mixing of J. R. Tuck
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a577ae254e0fcf8b21fc01d131f772e2
https://doi.org/10.1109/tmtt.1981.1130300
https://doi.org/10.1109/tmtt.1981.1130300
Autor:
P. E. Tannenwald, R. H. Mathews, T.C.L.G. Sollner, H. R. Fetterman, C. D. Parker, P. T. Parrish
Publikováno v:
Electromagnetics. 3:209-215
Planar antenna arrays have been developed at 140 GHz using twin-dipole elements. The initial systems have been fabricated using a hybrid approach with beam lead Schottky GaAs diodes mounted on quartz substrates. Heterodyne measurements of subelement
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::807d1f386677a1728fb7985622f990a8
https://doi.org/10.1080/02726348308915184
https://doi.org/10.1080/02726348308915184