Zobrazeno 1 - 10
of 377
pro vyhledávání: '"T.C. McGill"'
This volume contains the Proceedings of the NATO Advanced Research Workshop on'Growth and Optical Properties of Wide Gap II-VI Low Dimensional Semiconductors', held from 2 - 6 August 1988 in Regensburg, Federal Republic of Germany, under the auspices
Autor:
T.C. McGill
Publikováno v:
Proceedings of the IEEE. 87:924-926
In reviewing the predictions by G.K. Teal for 2012, I am struck most by the accuracy of his vision. The year 1962 was at the very beginning of the electronics revolution. Silicon integrated circuits were but a gleam in the eyes of a select few, yet T
Autor:
D.A. Collins, T.C. McGill
Publikováno v:
International Technical Digest on Electron Devices.
Summary form only given. Attention is given to a Stark effect transistor in which the emitter-collector current is controlled by a base positioned in such a way to provide a small base current. The reported structure uses a GaSb-InAs-AlSb-GaSb hetero
Autor:
T.C. McGill, D.Z.-Y. Ting
Publikováno v:
1998 Sixth International Workshop on Computational Electronics. Extended Abstracts (Cat. No.98EX116).
The current-voltage characteristics of n/sup +/ poly-Si/SiO/sub 2//p-Si tunnel structures containing nano-scale filaments embedded in ultra-thin oxide layers are analyzed using a 3D quantum mechanical scattering calculation. We find that the filament
Autor:
R. Accomo, N. Achtziger, S.J.A. Adams, I. Akasaki, J.P. Albert, H. Amano, R. André, A. Antonelli, M. Asif Khan, R.L. Aulombard, R.F. Austin, G. Balestrino, R. Baltramiejūnas, F. Bechstedt, N. Bécourt, L. Bergman, J. Bernholc, D. Bertho, CM. Bertoni, S. Billat, M. Boćkowski, C. Bodin, C. Bodin-Deshayes, E.B. Boiko, P. Boring, A. Bouhelal, G. Bratina, K.F. Brennan, P.R. Briddon, O. Briot, I. Broser, A. Bsiesy, E. Bucher, A. Burchard, G. Cantwell, C.H. Carter, T. Castro, B.C. Cavenett, D.J. Chadi, K.M. Chen, X. Chen, H. Cheng, W.J. Choyke, N.E. Christensen, J. Cibert, R. Cingolani, T. Cloitre, P.I. Cohen, A.T. Collins, H.L. Cotal, A. Cricenti, M. Dabbicco, L.S. Dang, R.F. Davis, M. Deicher, J.M. DePuydt, B. Dischler, V.A. Dmitriev, J.F. Donegan, J.P. Doran, J.J. Dubowski, L. Eckey, J.A. Edmond, A.L. Efros, R.J. Egan, F. Engelbrecht, W. Evstropov, M. Fanciulli, R.D. Feldman, A.C. Felici, M. Ferrara, L. Ferrari, D.K. Ferry, G. Feuillet, M. Fiedler, F. Finocchi, R. Fischer, G. Fishman, A. Franciosi, Ch. Fricke, S.I. Frolov, D. Fuchs, G. Galli, S.V. Gaponenko, F. Gaspard, V.I. Gavrilenko, V. Gavryushin, W. Gebhardt, I.N. Germanenko, J. Geurts, K.P. Geyzers, B. Gil, W. Gladfelter, G. Gleitsman, E.O. Göbel, C. Godet, O. Goede, I. Gorczyca, V.P. Gribkovskii, I. Grzegory, H.-E. Gumlich, R.L. Gunshor, A.L. Gurskii, J. Gutowski, F. Gygi, M.A. Haase, C Haberstroh, W.C. Harsch, I. Hauksson, S. Hayashi, J. Hegarty, W. Heimbrodt, K. Heime, V. Heine, R. Heitz, R. Helbig, B. Henderson, F. Henneberger, R. Hérino, J. Hermans, M. Heuken, A. Hoffmann, H. Hoffmann, N. Hoffmann, H. Hofsäss, T.P. Humphreys, R.W. Hunt, S. Iarlori, S. Iida, K. Ikoma, J.P. Itie, K. Jacobs, S.G. Jahn, J.M. Jancu, C. Jaussaud, T. Jentzsch, R.L. Johnson, R. Jones, C. Jouanin, P.H. Jouneau, J. Jun, V. Jungnickel, D. Juodžbalis, S.A. Kajihara, J. Kanicki, S. Karmann, H. Katayama-Yoshida, Y. Kawakami, A. Kazlauskas, A. Kean, M.R.H. Khan, R.D. King-Smith, H. Kinto, U. Kißmann, A. Klimakow, N.I. Klyui, N. Koide, P. Koidl, H.-S. Kong, H.S. Kong, Th. König, J. Kono, V.K. Kononenko, M. Kotaki, C. Kreß, T. Krings, St. Krukowski, V. Kubertavicius, G.H. Kudlek, W. Kuhn, K. Kunc, Y. Kuroda, J.N. Kuznia, K.W. Kwak, G. Labrunie, D.B. Laks, W.R.L. Lambrecht, S. Lankes, V. Yu. Lebed, T. Lei, S. Leibenzeder, M. Lepore, T. Licht, M. Ligeon, I. Yu. Linkov, E. Litwin-Staszewska, S. Logothetidis, G. Luce, E.V. Lutsenko, M. Ch. Lux-Steiner, F. Madéore, R. Magerle, H.-E. Mahnke, K. Maier, I.E. Malinovskii, K. Manabe, M. Marinelli, B.G. Markey, A. Markwitz, T. Marshall, H. Mathieu, H. Matsunami, J.O. McCaldin, T.C. McGill, S.W.S. McKeever, J. Meier, I. Mihalcescu, E. Milani, A.I. Mitcovets, T. Mitsuyu, N. Miura, R.J. Molnar, E. Molva, M. Morohashi, Ya.V. Morozenko, T.D. Moustakas, A. Mujica, G. Mula, F. Muller, W. Müller-Sebert, A. Muñoz, A. Mura, A. Naumov, R.J. Needs, R.J. Nemanich, R. Nicolini, A.V Nurmikko, K.P. O'Donnell, T. Oguchi, K. Ohkawa, S. Okamoto, N. Okazaki, H. Okumura, M.A. Osman, J.W. Palmour, E.C. Paloura, M. Palummo, A. Paoletti, A.M. Papon, P. Paroli, M. Parrinello, G. Pensl, E. Pereira, P. Perlin, J. Petalas, W. Pfeiffer, M.C. Phillips, F.G Pikus, I. Pinter, M. Pirzer, U. Pohl, U.W. Pohl, H.M. Polatoglou, A. Polian, R. Polini, B.E. Ponga, J.L. Ponthenier, S. Porowski, J.F. Prins, K.A. Prior, J. Puls, J. Qiu, A. Qteish, G. Raciukaitis, L. Reining, T. Reisinger, M. Restle, M. Righini, P. Rodríguez-Hernández, S.J. Rolfe, R. Romestain, VD. Ryzhikov, B. Sailer, D. Sander, L. Santos, T. Sasaki, M. Sawada, G. Scamarcio, M.A. Scarselli, M. Schadt, A. Schneider, J. Schneider, A. Schöner, A. Schülzgen, S. Selci, M. Shinohara, J. Simpson, L. Sorba, B. Spellmeyer, R.P. Stanley, H. Stanzl, R.A. Stein, H. Stewart, I. Suemune, G. Sulzer, T. Suski, W. Suttrop, J.F. Swenberg, M.R. Taghizadeh, S. Takeyama, T.L. Tansley, A. Tebano, P. Thurian, E. Tosatti, C. Trager-Cowan, N. Troullier, I. Tschentscher, N. Tsuboi, A. Tsujimura, K. Tsukioka, P.A. Tupenevich, K.F. Turner, H. Uchiki, M. Uhrmacher, B. Ullrich, D. Uttamchandani, C.G. Van de Walle, J. van der Weide, J.M. Van Hove, D. Vanderbilt, L. Vanzetti, D. Vasileska, J.C. Vial, H.P. Wagner, U. Wahl, H. Waldmann, CT. Walker, E.G. Wang, M.W. Wang, S.Y. Wang, Y. Wang, V. Weinhold, T. Wiehert, C. Wild, W. Witthuhn, H. Wolf, K. Wolf, M. Wörz, G.P. Yablonskii, M. Yagi, S. Yamaga, M. Yamanaka, F. Yang, S. Yoshii, A. Yoshikawa, X. Yu, W. Zeitz, L.G. Zimin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d96fb2c6f3c62ae9faa940cfe8d35d9e
https://doi.org/10.1016/b978-0-444-81573-6.50099-2
https://doi.org/10.1016/b978-0-444-81573-6.50099-2
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Publikováno v:
Surface Science. 113:161-164
Publikováno v:
Journal of Physics and Chemistry of Solids. 34:2105-2115
The absorption β in ionic insulators due to multiphonon processes is examined for frequencies higher than several times the reststrahl frequency. The frequency dependence and temperature dependence of β are calculated for simple models which includ