Zobrazeno 1 - 10
of 27
pro vyhledávání: '"T.C. Cisco"'
Autor:
M. Hauhe, G.M. Sakamoto, R. Alidio, Yoosin Kang, R. Tayrani, Q. Chaudhry, M.A. Teshiba, I.S. Ahmad, T.C. Cisco
Publikováno v:
IEEE Journal of Solid-State Circuits. 38:1462-1470
This paper reports the performances of several broad-band monolithic SiGe monolithic microwave integrated circuits (MMICs) suitable for phased-array radar applications. The amplitude and phase control MMIC designs are based on an optimized SiGe p-i-n
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::439b4a84106bd57d44762e303fe992b4
https://doi.org/10.1109/jssc.2003.815933
https://doi.org/10.1109/jssc.2003.815933
Autor:
R. Tayrani, M.A. Teshiba, G.M. Sakamoto, Y. Kang, Q. Chaudhry, M. Hauhe, I.S. Ahmad, T.C. Cisco, R. Alidio
Publikováno v:
The 2005 IEEE Annual Conference Wireless and Micrwave Technology, 2005..
This paper reports the performances of several broadband monolithic SiGe MMICs suitable for phased array radar applications. The amplitude and phase control MMIC designs are based on an optimized SiGe PIN diode offered by IBM 5-HP SiGe foundry proces
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0a87afc655305d77368b835d6fc21469
https://doi.org/10.1109/wamic.2005.1528416
https://doi.org/10.1109/wamic.2005.1528416
Publikováno v:
GaAs IC Symposium Technical Digest 1992.
High-efficiency X-band power GaAs-AlGaAs HBT (heterojunction bipolar transistor) performance has been achieved. A common-base 6-emitter-finger HBT device (each finger periphery 2 mu m*20 mu m) exhibited a power-added-efficiency of 62.1%, an output po
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1752db7ec6f994498271d2b166437e56
https://doi.org/10.1109/gaas.1992.247270
https://doi.org/10.1109/gaas.1992.247270
Publikováno v:
GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium. 18th Annual Technical Digest 1996.
We have developed a highly efficient two stage X-band MMIC high power amplifier. Based on an optimized PHEMT device structure and a novel design approach, the amplifier demonstrated an average power added efficiency of 55% and an output power of 5 wa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e6fd5c55e69d618fa50b216922569f09
https://doi.org/10.1109/gaas.1996.567818
https://doi.org/10.1109/gaas.1996.567818
Publikováno v:
1994 IEEE MTT-S International Microwave Symposium Digest (Cat. No.94CH3389-4).
We report on the microwave performance of InP-based double heterojunction bipolar transistors (DHBT) for X-band and C-band applications with power cells operating at an output power greater than 2 W. Our power performance characterization indicated a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fa94df15b61075351b3e2ea377125b87
https://doi.org/10.1109/mwsym.1994.335513
https://doi.org/10.1109/mwsym.1994.335513
Publikováno v:
GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995.
A systematic experiment was designed and implemented to optimize the 0.25 /spl mu/m gate InGaAs/AlGaAs pseudomorphic HEMT for the fabrication of high power X-band monolithic amplifiers. The material structure and gate recess process were engineered s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::554a9c488fef6ae8b93a621671e5df91
https://doi.org/10.1109/gaas.1995.529011
https://doi.org/10.1109/gaas.1995.529011
Resolving Degradation Mechanism in Carbon and Beryllium Doped HBT’s Using Pulsed Mode Current Stress
Publikováno v:
MRS Proceedings. 378
The reliability of high performance carbon and beryllium-doped heterojunction bipolar transistors (HBT’s) is investigated using a pulsed mode current stress. After the current stress, the collector current reduction (measured at a fixed Vbe) and th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f8d2fd847501198e8fbc8e878a02f63b
https://doi.org/10.1557/proc-378-777
https://doi.org/10.1557/proc-378-777
Autor:
T.C. Cisco, R.L. Forward
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 31:45-50
A Iarge percentage of microwave field-effect transistors (FET's) are shown to act as a broad-band artificial resistor with a resistance of about 25 Omega when their drain is connected to their gate. The resistance appears between the gate-drain lead
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::be70cdceed97a79552d4d9d4a564149f
https://doi.org/10.1109/tmtt.1983.1131427
https://doi.org/10.1109/tmtt.1983.1131427
Autor:
T.W. Parker, T.C. Cisco
Publikováno v:
S-MTT International Microwave Symposium Digest.
The proximity effects of multiple step transmission line discontinuities have been computed by a computer assisted integral equation technique and good agreement with experimental data and exact asymptotic solutions is obtained. New results for typic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4daf9dd08d9775ba24bb298ca9fa9105
https://doi.org/10.1109/mwsym.1974.1123488
https://doi.org/10.1109/mwsym.1974.1123488
Publikováno v:
G-MTT 1970 International Microwave Symposium.
With the advent of microwave integrated circuits many circuits which have been discarded in the early days of microwave theory and techniques are finding new applications. The bridged-T has been used for years in low frequency applications as attenua
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f362d63d7ff6f4b9795fc4ea896a3c28
https://doi.org/10.1109/gmtt.1970.1122769
https://doi.org/10.1109/gmtt.1970.1122769