Zobrazeno 1 - 10
of 152
pro vyhledávání: '"T.-Z. Hong"'
Autor:
Yao-Jen Lee, Hiroyuki Ishii, Tatsuro Maeda, Po-Jung Sung, T.-Z. Hong, Toshifumi Irisawa, Wen Hsin Chang
Publikováno v:
ECS Transactions. 102:17-26
Continuous scaling of device dimension pushed Si channel to its physical limit, alternative high mobility channels such as (Si)Ge and (In)GaAs have been considered to replace Si to further enhance CMOS performance. In the meantime, ultrathin body (UT
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2b8c176aa4644f13b484e78e19b41eae
https://doi.org/10.1149/10204.0017ecst
https://doi.org/10.1149/10204.0017ecst
Autor:
S.-W. Chang, T.-H. Lu, C.-Y. Yang, C.-J. Yeh, M.-K. Huang, C.-F. Meng, P.-J. Chen, T.-H. Chang, Y.-S. Chang, J.-W. Jhu, T.-Z. Hong, C.-C. Ke, X.-R. Yu, W.-H. Lu, M. A. Baig, T.-C. Cho, P.-J. Sung, C.-J. Su, F.-K. Hsueh, B.-Y. Chen, H.-H. Hu, C.-T. Wu, K.-L. Lin, W. C.-Y. Ma, D.-D. Lu, K.-H. Kao, Y.-J. Lee, C.-L. Lin, K.-P. Huang, K.-M. Chen, Y. Li, S. Samukawa, T.-S. Chao, G.-W. Huang, W.-F. Wu, W.-H. Lee, J.-Y. Li, J.-M. Shieh, J.-H. Tarng, Y.-H. Wang, W.-K. Yeh
Publikováno v:
2021 IEEE International Electron Devices Meeting (IEDM).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6cbb0acb2a1bba95fb9b21e8825d3eaf
https://doi.org/10.1109/iedm19574.2021.9720675
https://doi.org/10.1109/iedm19574.2021.9720675
Autor:
M. Miura, T.-Z. Hong, C.-J. Tsai, X.-R. Yu, Y.-T. Huang, Y. Chuang, Hiroyuki Ishii, Seiji Samukawa, Chia-Min Lin, G.-L. Luo, C.-J. Su, Jiun-Yun Li, Kuo-Hsing Kao, T.-Y. Chu, Tatsuro Maeda, Po-Jung Sung, W. C.-Y. Ma, H.-Y. Chao, Ta-Chun Cho, Hisu-Chih Chen, W.-H. Chang, Guo-Wei Huang, N.-C. Lin, S.-M. Luo, Kun-Lin Lin, Jia-Min Shieh, Toshifumi Irisawa, K.-P. Huang, Fu-Kuo Hsueh, Chien-Ting Wu, Jianqing Lin, C.-Y. Yang, W.-F. Wu, S.-T. Chung, J.-H. Tarng, Tien-Sheng Chao, Ricky W. Chuang, Darsen D. Lu, Yeong-Her Wang, Yao-Jen Lee, A. Agarwal, Yiming Li, M.-J. Li, Wen-Kuan Yeh
Publikováno v:
2020 IEEE International Electron Devices Meeting (IEDM).
For the first time, we demonstrate heterogeneous complementary FETs (hCFETs) with Ge and Si channels fabricated with a layer transfer technique. The 3D channel stacking integration particularly employs a low-temperature (200 °C) hetero-layers bondin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b0b85a6f84bd690a0af5c9400f93a632
https://doi.org/10.1109/iedm13553.2020.9372001
https://doi.org/10.1109/iedm13553.2020.9372001
Autor:
Boersma, Bart1,2 (AUTHOR) bart.boersma@unige.ch, Poinot, Hélène3,4 (AUTHOR) helene.poinot@unige.ch, Pommier, Aurélien5 (AUTHOR) aurelien.pommier@uca.fr
Publikováno v:
Pharmaceutics. Aug2024, Vol. 16 Issue 8, p974. 31p.
Publikováno v:
Advances in Analysis and Detection of Explosives ISBN: 9789048142415
A number of paper detonators were found in a smuggling case. The explosives were coated on brown paper and wrapped as cylinder tubes. It could easily pass X-ray examination during a security check. Two different colored explosive ingredients were iso
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2715c612e84a6834d1a6d7e5a3fc86bf
https://doi.org/10.1007/978-94-017-0639-1_15
https://doi.org/10.1007/978-94-017-0639-1_15
Autor:
Mao, Xuemei, Yin, Xiaole, Yang, Yu, Che, You, Xu, Xiaoqing, Deng, Yu, Li, Liguan, Zhang, Tong
Publikováno v:
Critical Reviews in Environmental Science & Technology; 2024, Vol. 54 Issue 22, p1633-1650, 18p
Autor:
Wiranata, Lalu Febrian1,2 febrian.nata@gmail.com, Kurniadi, Deddy1
Publikováno v:
EUREKA: Physics & Engineering. 2023, Issue 4, p77-86. 10p.
Autor:
Shirokov, V. B.1,2 (AUTHOR), Timoshenko, P. E.2 (AUTHOR), Kalinchuk, V. V.1 (AUTHOR) vkalin415@mail.ru
Publikováno v:
Doklady Physics. May2023, Vol. 68 Issue 5, p159-163. 5p.
Publikováno v:
Bulletin of the Chinese Ceramic Society; Jul2024, Vol. 43 Issue 7, p2383-2392, 10p
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