Zobrazeno 1 - 10
of 90
pro vyhledávání: '"T.-K. Ku"'
Autor:
J. H. Lau, C.-J. Zhan, P.-J. Tzeng, C.-K. Lee, M.-J. Dai, H.-C. Chien, Y.-L. Chao, W. Li, S.-T. Wu, J.-F. Hung, R.-M. Tain, C.-H. Lin, Y.-C. Hsin, C.-C. Chen, S.-C. Chen, C.-Y. Wu, J.-C. Chen, C.-H. Chien, C.-W. Chiang, H.-H. Chang, W.-L. Tsai, R.-S. Cheng, S.-Y. Huang, Y.-M. Lin, T.-C. Chang, C.-D. Ko, T.-H. Chen, S.-S. Sheu, S.-H. Wu, Y.-H. Chen, W.-C. Lo, T.-K. Ku, M.-J. Kao, D.-C. Hu
Publikováno v:
Journal of Microelectronics and Electronic Packaging. 8:171-178
The feasibility of a 3D IC integration SiP has been demonstrated in this investigation. The heart of this SiP is a TSV (through-silicon via) interposer with an RDL (redistribution layer) on both sides, IPD (integrated passive devices), and SS (stress
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::678f3d464ab99ca88abd0b1a0d2dc22b
https://doi.org/10.4071/imaps.306
https://doi.org/10.4071/imaps.306
Autor:
Jie Xue, T-H Chen, S. Chung, John H. Lau, T-K Ku, C-J Zhan, Y. Lee, P. Chang, S-C Chen, M-J Kao, H. Fu, C-T Ko, Y. Hsu, Li Li, M-J Dai, W. Tsai, W-C Lo, C-K Lee, P-J Tzeng, Z. Hsiao, Y-H Chen, M. Brillhart, J. Huang, S-W Chen
Publikováno v:
International Symposium on Microelectronics. 2011:000650-000656
In this study, the wafer bumping and characterization of fine-pitch lead-free solder microbumps on 300mm wafer for 3D IC integration are investigated. Emphasis is placed on the Cu-plating solutions (conformal and bottom-up). Also, the amount of Cu an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::13c1100ae76a72ff83fb3f0d772e7338
https://doi.org/10.4071/isom-2011-wa6-paper2
https://doi.org/10.4071/isom-2011-wa6-paper2
Autor:
Y. D. Lin, Y. S. Chen, K. H. Tsai, P. S. Chen, Y. C. Huang, S. H. Lin, P. Y. Gu, W. S. Chen, H. Y. Lee, S. Z. Rahaman, C. H. Hsu, F. T. Chen, T. K. Ku
Publikováno v:
2015 International Symposium on VLSI Technology, Systems and Applications.
Owing to NAND flash technology facing its scaling limit, resistive random access memory (RRAM) with simple film stack and no cross coupling issue between cells is a promising candidate for future high density memory application [1,2]. The 1TnR archit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7622ff780844daf546d7daa8521bec65
https://doi.org/10.1109/vlsi-tsa.2015.7117559
https://doi.org/10.1109/vlsi-tsa.2015.7117559
Autor:
H. Y. Lee, T. Y. Wu, F. T. Chen, S. Z. Rahaman, Y. T. Lin, Y. S. Chen, M. Tsai, C. H. Tsai, K. H. Tsai, P. Y. Gu, T. K. Ku, W. S. Chen, Pang-Shiu Chen
Publikováno v:
2013 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA).
The scalability issue of 1T-1R Ti/HfOx BRM, which is resulted from the interaction between BRM and transistor, is demonstrated. While a sufficiently lower Vforming can mitigate the RP, an alternative buffer layer Ta is also proposed to further scale
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ce8405341c6c7c71e38a0bca89459493
https://doi.org/10.1109/vlsi-tsa.2013.6545586
https://doi.org/10.1109/vlsi-tsa.2013.6545586
Autor:
K. H. Tsai, Y. T. Lin, Y. S. Chen, W. S. Chen, T. Y. Wu, M. J. Tsai, S. Z. Rahaman, H. Y. Lee, T. K. Ku, F. T. Chen, C. H. Tsai, Pang-Shiu Chen, P. Y. Gu
Publikováno v:
2013 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA).
1T-1R Zr/HfOx RRAM with improved uniformity is proposed, which is due to the easily Oxidation of Zr layer from both HfOx and supporting SiO2. The formation of ZrOx become a good current limiter which help the device prevent scalability issue.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8358ea80acb8b907a6c2da9521a86130
https://doi.org/10.1109/vlsi-tsa.2013.6545587
https://doi.org/10.1109/vlsi-tsa.2013.6545587
Autor:
Y. C. Wu, T. K. Ku, T. K. Huang, Z. H. Lin, Shyh-Shyuan Sheu, J. Y. Wang, C. H. Lin, S. S. H. Hsu, C. S. Lin
Publikováno v:
Extended Abstracts of the 2011 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::808c2e68af87e68ef9f002299ccd35ac
https://doi.org/10.7567/ssdm.2011.p-2-8
https://doi.org/10.7567/ssdm.2011.p-2-8
Autor:
P. F. Chiu, T. K. Ku, M. J. Tsai, Meng-Fan Chang, C. W. Wu, Shyh-Shyuan Sheu, M. S. Ho, C. H. Chuang, P. C. Chen
Publikováno v:
Extended Abstracts of the 2011 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e683d63d1776397979d6a93aa1b722fe
https://doi.org/10.7567/ssdm.2011.g-4-1
https://doi.org/10.7567/ssdm.2011.g-4-1
Autor:
T.-K. Ku, C.-C.J. Kuo
Publikováno v:
ICASSP
The solution of symmetric positive definite Toeplitz systems Ax=b by the preconditioned conjugate gradient (PCG) method was recently proposed by Strang (1986) and analyzed by Chan (1989) and Chan and Strang (1989). The convergence rate of the PCG met
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1f8ac0d0586383872ef80feb276e4f99
https://doi.org/10.1109/78.157188
https://doi.org/10.1109/78.157188
Autor:
N. Motegi, J. Chen, T. Kondo, L.-J. Chen, C. Wei, T.-K. Ku, Y. Mizusawa, H.-C. Chen, S. Toyoda
Publikováno v:
Proceedings of the IEEE 1998 International Interconnect Technology Conference (Cat. No.98EX102).
In this paper, comprehensive studies on planarized Al alloy interconnect and contact plug technology using long-throw-sputtering (LTS) and two-step cold/hot Al flow technologies are presented. Experimental results demonstrate that LTS-based cold/hot
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0bd05a1da23a2ae3f867d720965897d3
https://doi.org/10.1109/iitc.1998.704906
https://doi.org/10.1109/iitc.1998.704906
Autor:
C.-C.J. Kuo, T.-K. Ku
Publikováno v:
ICASSP
The use of preconditioned iterative methods to solve a system of equations with a Toeplitz-plus-Hankel coefficient matrix is studied. A preconditioner for Toeplitz-plus-Hankel matrices is proposed, and the spectral properties of preconditioned ration
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::03fb0de90443f6d7a258e721725bae2f
https://doi.org/10.1109/icassp.1992.226264
https://doi.org/10.1109/icassp.1992.226264