Zobrazeno 1 - 10
of 69
pro vyhledávání: '"T. Zinke"'
Autor:
T. Zinke, Klaus Petermann, A. Splett, J. Schmidtchen, U. Fischer, R. Moosburger, B. Schuppert
Publikováno v:
Journal of Lightwave Technology. 14:2311-2323
This paper reviews various techniques and ideas in the field of integrated optics in silicon, mainly focused on silicon in conjunction with germanium. We will discuss different approaches for waveguides, passive and active components in silicon as we
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1f827ff82bfe8857970633f9f325f79a
https://doi.org/10.1109/50.541223
https://doi.org/10.1109/50.541223
Autor:
Dieter Bimberg, Herbert Schumann, J.Y. Hyeon, Sonja Wernik, Armin Dadgar, R. Heitz, B. Srocka, Alois Krost, A. Knecht, H. Scheffler, A. Näser, M. Kuttler, T. Wolf, T. Zinke
Publikováno v:
Journal of Crystal Growth. 145:455-461
Semi-insulating InP is generally grown by Fe doping. In contact with p-type layers, however, semi-insulating characteristics turn out to be difficult to reproduce because of pronounced interdiffusion of Fe and p-type dopants. Co-doping of InP:Fe with
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::385dc281b361d36ec77fe7468b92e91c
https://doi.org/10.1016/0022-0248(94)91091-x
https://doi.org/10.1016/0022-0248(94)91091-x
Publikováno v:
Journal of Applied Physics. 75:3870-3881
The optimum conditions for the fabrication of semi‐insulating InP epitaxial layers grown by metalorganic chemical‐vapor deposition are investigated in a comparative study of the structural, electrical, and diffusive properties of Fe‐ and Ti‐d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::53cc9dda7e50f02754b76de5b11162e6
https://doi.org/10.1063/1.356067
https://doi.org/10.1063/1.356067
Publikováno v:
Applied Physics Letters. 69:2376-2378
Tunable room‐temperature electroluminescence, photocurrent, and photoluminescence in the near infrared (λ∼1.3 μm) has been observed from Ge/Si/Ge/Si1−xGex quantum‐well (QW) diodes grown by molecular‐beam epitaxy. The QWs are grown on a p+
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6f57803de566a2ec1e9bd02ac8691e07
https://doi.org/10.1063/1.117642
https://doi.org/10.1063/1.117642
Publikováno v:
Electronics Letters. 30:406-408
The realisation of a thermo-optical Mach-Zehnder interferometer switch based on SOI (silicon-on-insulator) material is reported. At a wavelength of 1.3 mu m, on-off ratios of 13 dB (TE) and 9 dB (TM) are achieved with a switching power of 150 mW. The
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2f3fca6931be7a7f168914ef048fa25b
https://doi.org/10.1049/el:19940310
https://doi.org/10.1049/el:19940310
Autor:
H. Kibbel, T. Zinke, Hartmut Presting, Erich Kasper, A. Splett, Klaus Petermann, H. J. Herzog
Publikováno v:
IEEE Photonics Technology Letters. 6:59-61
The integration of single-mode rib waveguides and photodetectors in silicon using MBE-grown SiGe-layers is reported. Short photodetectors exhibit dark currents below 200 nA at 7 V reverse bias. For the fiber-waveguide-detector coupling an overall qua
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6b73c34bf38c652886c9b66389bf2423
https://doi.org/10.1109/68.265889
https://doi.org/10.1109/68.265889
Publikováno v:
1993 (5th) International Conference on Indium Phosphide and Related Materials.
Codoping of InP:Fe with Ti was found to inhibit the pronounced interdiffusion of Fe and p-type dopants. Because of the high thermal stability and the simultaneous properties for excess shallow donors and excess shallow acceptors codoped InP:Fe+Ti rem
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::035d11f303e84f01b431c5ff78fc29bf
https://doi.org/10.1109/iciprm.1993.380546
https://doi.org/10.1109/iciprm.1993.380546
Publikováno v:
1995 IEEE International SOI Conference Proceedings.
We report on the first 1/spl times/2 and 2/spl times/2 waveguide switches based on single-moded rib-waveguides in SOI. The switches are based on the thermo-optical effect and require switching powers of 85 mW at a wavelength of/spl lambda/=1.3 /spl m
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9bca51201b361bb1b85bbf18c0d9a785
https://doi.org/10.1109/soi.1995.526500
https://doi.org/10.1109/soi.1995.526500
Publikováno v:
SPIE Proceedings.
Integrated Optics in SOI need a concept for passive optical couplers, which is highly insensitive to fabrication tolerances. For this purpose directional couplers as well as couplers based on Multi-Mode-Interference (MMI) have been investigated, both
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3aace28f344ea6a5eb549c1df596a1d8
https://doi.org/10.1117/12.273854
https://doi.org/10.1117/12.273854