Zobrazeno 1 - 10
of 88
pro vyhledávání: '"T. Witters"'
Autor:
M. Thesberg, Z. Stanojevic, O. Baumgartner, C. Kernstock, D. Leonelli, M. Barci, X. Wang, X. Zhou, H. Jiao, G.L. Donadio, D. Garbin, T. Witters, S. Kundu, H. Hody, R. Delhougne, G. Kar, M. Karner
Owing to the increasing interest in the commercialization of phase-change memory (PCM) devices, a number of TCAD models have been developed for their simulation. These models formulate the melting, amorphization and crystallization of phase-change ma
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4162c07533c5f97553bcd5bf1c7e9376
http://arxiv.org/abs/2211.06084
http://arxiv.org/abs/2211.06084
Autor:
V. Vega-Gonzalez, J. Bekaert, E. Kesters, Q. T. Le, C. Lorant, O. Varela P., L. Teugels, N. Heylen, Z. El-Mekki, M. van der Veen, T. Webers, C. J. Wilson, H. Vats, L. Rynders, M. Cupak, J. Uk-Lee, Y. Drissi, L. Halipre, A.-L. Charley, P. Verdonck, T. Witters, S. V. Gompel, B. Briggs, Y. Kimura, N. Jourdan, I. Ciofi, A. Gupta, A. Contino, G. Boccardi, S. Lariviere, L. Dupas, B. De-Wachter, E. Vancoille, S. Decoster, F. Lazzarino, M Ercken, P. Debacker, R. Kim, D. Trivkovic, K. Croes, P. Leray, L. Dillemans, Y.-F. Chen, Z. Tokei, J. Versluijs, A. Lesniewska, S. Paolillo, R. Baert, H. Puliyalil
Publikováno v:
2019 IEEE International Electron Devices Meeting (IEDM).
The integration of a three-layer BEOL process which includes an intermediate 21 nm pitch level, relevant for the 3 nm technology node, is demonstrated. A full barrier-less Ruthenium (Ru) dual-damascene (DD) metallization allowed to test different dim
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7eecb12b8a386042eac7e3255fe54876
https://doi.org/10.1109/iedm19573.2019.8993538
https://doi.org/10.1109/iedm19573.2019.8993538
Akademický článek
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Autor:
T. Witters, Marc Heyns, Stefan De Gendt, Annelies Delabie, Martine Claes, G. Loriaux, S. Van Elshocht, Harald F. Okorn-Schmidt
Publikováno v:
Solid State Phenomena. 92:7-10
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a885b3d7c6bb0ff491c32242a9981623
https://doi.org/10.4028/www.scientific.net/ssp.92.7
https://doi.org/10.4028/www.scientific.net/ssp.92.7
Akademický článek
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Autor:
Johannes Meersschaut, T. Witters, André Vantomme, Wilfried Vandervorst, M Kayhko, H. P. Lenka, Qiang Zhao
The performance, strengths and limitations of RBS and PIXE for the characterization of trace amounts of Cl in TiN thin films are critically compared. The chlorine atomic concentration in ALD grown TiN thin films on Si is determined for samples grown
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6c22d02f4716925a2b6deb9dc2e8b23f
http://juuli.fi/Record/0040465613
http://juuli.fi/Record/0040465613
Autor:
L.-A. Ragnarsson, Xiaoping Shi, S. Van Elshocht, Yasuhiro Shimamoto, Annelies Delabie, Y. Manabe, T. Witters, M.M. Heyns, V. S. Kaushik, Martine Claes, S. De Gendt, E. Rohr
Publikováno v:
Extended Abstracts of International Workshop on Gate Insulator (IEEE Cat. No.03EX765).
In this paper, we report on the interactions between HfO/sub 2/ and poly-Si with varying HfO/sub 2/ films. The impact HfO/sub 2/ interaction on important parameters such as gate leakage, yield, flatband voltage and mobility were discussed.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::23ed3bf06ec4ce994fab073b1b8e3c75
https://doi.org/10.1109/iwgi.2003.159185
https://doi.org/10.1109/iwgi.2003.159185
Conference
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Autor:
G. Beyer, Annelies Delabie, Sofie Mertens, L. Carbonell, T. Witters, Zsolt Tokei, Kavita Shah, S. Van Elshocht, J. Swerts, Virginie Gravey, A. Franquet, Silvia Armini, A. Cockburn, M. Schaekers, Mihaela Popovici, J. Aubuchon
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 30:01A103
Ru thin films were deposited by plasma enhanced atomic layer deposition using MethylCyclopentadienylPyrrolylRuthenium (MeCpPy)Ru and N2/NH3 plasma. The growth characteristics have been studied on titanium nitride or tantalum nitride substrates of var
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5b57b760304552a5685312ab4da6aaa0
https://doi.org/10.1116/1.3625566
https://doi.org/10.1116/1.3625566
Autor:
Jorge A. Kittl, K. De Meyer, S. Van Elshocht, C. Adelmann, M. Jurczak, Thierry Conard, Isabelle Ferain, A. Franquet, T. Witters, Johannes Meersschaut
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 27:1021
Thin film reactions and interface formation in advanced high-κ-metal-gate stacks containing rare-earth oxides have been studied. In particular, interfacial reactions of Dy2O3 and HfSiO4 with TiN- or TaCN-based metals were studied. It is shown that D
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dd655c74a46daea477dcc21b6b4fe4f3
https://doi.org/10.1116/1.3112629
https://doi.org/10.1116/1.3112629