Zobrazeno 1 - 10
of 37
pro vyhledávání: '"T. Wetteroth"'
Autor:
Syd R. Wilson, Thomas E. Tiwald, Jim Christiansen, Rich Gregory, John A. Woollam, Adrian Powell, Stefan Zollner, T. Wetteroth
Publikováno v:
Physical Review B. 60:11464-11474
We have measured the dielectric function of bulk nitrogen-doped 4H and 6H SiC substrates from 700 to 4000 ${\mathrm{cm}}^{\mathrm{\ensuremath{-}}1}$ using Fourier-transform infrared spectroscopic ellipsometry. Photon absorption by transverse optical
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::531dc9e17d442eff44b110c2596e450d
https://doi.org/10.1103/physrevb.60.11464
https://doi.org/10.1103/physrevb.60.11464
Publikováno v:
Solid-State Electronics. 43:51-56
A transconductance dip, observed in floating body partially depleted SOI devices, is due to transient effects and is reduced with a positive back bias in SOI nMOSFETs. MEDICI simulations show that both hole and electron densities near the front inter
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ec3c3938a6422073b0da188579048160
https://doi.org/10.1016/s0038-1101(98)00235-4
https://doi.org/10.1016/s0038-1101(98)00235-4
Autor:
H. C. Shin, H. Shin, T. Wetteroth, Juergen A. Foerstner, Syd R. Wilson, S. Hong, Marco Racanelli, Bor-Yuan Hwang, M. Huang
Publikováno v:
Journal of Electronic Materials. 25:13-21
Thin film silicon on insulator (TFSOI) devices have been studied for years. The advantages of TFSOI devices include: a reduction in junction capacitance, potentially lower junction leakage, a simpler process, and many other well documented advantages
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7ffd3391e6e9d1bcdfc14db94d72d599
https://doi.org/10.1007/bf02666168
https://doi.org/10.1007/bf02666168
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 55:148-153
The ability to control a process is determined by the variability of the process and the variability of the system used to monitor the process. The monitoring system consists of the monitor wafer, the operator, the environment and the test system (ga
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::53f0b11e54ea71c0914fad761015db85
https://doi.org/10.1016/0168-583x(91)96152-b
https://doi.org/10.1016/0168-583x(91)96152-b
Publikováno v:
Applied Physics Letters. 75:2623-2625
H+ implantation of SiC is the basis for a thin-film transfer process, which when combined with oxidation and hydrophilic wafer bonding, can be exploited to produce silicon carbide-on-insulator material useful as a wide-band-gap semiconductor. This th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c52c1000f09e56157148871467d63606
https://doi.org/10.1063/1.125098
https://doi.org/10.1063/1.125098
Publikováno v:
Applied Physics Letters. 72:1199-1201
Thin film silicon-on-insulator (SOI) devices have an advantage of excellent isolation due to the buried oxide layer leading to reduced capacitance coupling and no latchup in complementary metal-oxide-silicon circuits compared with bulk silicon device
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::feb264cb5be4572c9bc377ce9d15d8ce
https://doi.org/10.1063/1.121012
https://doi.org/10.1063/1.121012
Autor:
Syd R. Wilson, D. Werho, T.-C. Lee, Hank Shin, Stella Q. Hong, T. Wetteroth, Dieter K. Schroder
Publikováno v:
Applied Physics Letters. 71:3397-3399
Lateral gettering is implemented in thin-film silicon-on-insulator (TFSOI) substrates by introducing crystalline defects in the vicinity of metal-oxide-semiconductor device channel regions prior to gate oxidation. As a result of the gettering a signi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b789386594e07f40019bd7e447894657
https://doi.org/10.1063/1.120347
https://doi.org/10.1063/1.120347
Autor:
Marco Racanelli, M. Huang, Ik-Sung Lim, Bor-Yuan Hwang, T. Wetteroth, Juergen A. Foerstner, Jenn Tsao
Publikováno v:
Proceedings of 1993 IEEE International SOI Conference.
While thin film SOI (TFSOI) advantages over bulk technology have been reported over the past many years, the TFSOI commodity products are yet to be introduced. Applications of SOI remain in the thick film rad-hard oriented niche market. Theoretical s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::55e3e0a7a5de05e1b1c1a4e5399e0fde
https://doi.org/10.1109/soi.1993.344565
https://doi.org/10.1109/soi.1993.344565
Autor:
T. Wetteroth
Publikováno v:
Proceedings. IEEE International SOI Conference.
Current visible light reflectance spectrometers in nearly all wafer fabs have the capability to measure thin film (
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::012a917aca4f9e77cc04be49aaa954c5
https://doi.org/10.1109/soi.1994.514234
https://doi.org/10.1109/soi.1994.514234
Autor:
Hyungcheol Shin, T. Wetteroth, H. Shin, Peter Fejes, Juergen A. Foerstner, Marco Racanelli, S. Hong, Bor-Yuan Hwang, S. Cheng, Heemyong Park, W.M. Huang, Syd R. Wilson
Publikováno v:
Proceedings of International Electron Devices Meeting.
The impact of stress and dopant redistribution along the field edge of SOI devices on offstate leakage, low voltage performance, and yield is discussed. For the first time, stress caused by overoxidation of the field region is shown to cause excessiv
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::71e08e96b6ea86e8fea64bb8a5483a7b
https://doi.org/10.1109/iedm.1995.499358
https://doi.org/10.1109/iedm.1995.499358