Zobrazeno 1 - 10
of 68
pro vyhledávání: '"T. Warminski"'
Autor:
A.K. Duncan, T. Warminski
Publikováno v:
Materials Science Forum. :437-442
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5a150891b470bdc520efdbda9fee3365
https://doi.org/10.4028/www.scientific.net/msf.67-68.437
https://doi.org/10.4028/www.scientific.net/msf.67-68.437
Autor:
C. J. Rossouw, Andrew W. Stevenson, Brian F. Usher, G. I. Christiansz, S. Georgiou, S. R. Glanvill, T. Warminski, Geoff N. Pain, Stephen W. Wilkins, M. S. Kwietniak, L. S. Wielunski
Publikováno v:
X-Ray Spectrometry. 19:79-83
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f180a2bba4ae49d9fba2324bc6303e8c
https://doi.org/10.1002/xrs.1300190210
https://doi.org/10.1002/xrs.1300190210
Autor:
Patrick W. Leech, S.R. Glanvill, S. W. Wilkins, C. J. Rossouw, N. Petkovic, J. Thompson, Martyn H. Kibel, M. S. Kwietniak, P. J. Gwynn, Andrew W. Stevenson, T. J. Elms, Geoff N. Pain, D. Gao, T. Warminski, L. S. Wielunski, C. Sandford, N. Bharatula
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 8:1067-1077
Specular HgTe–CdTe superlattice epilayers have been obtained on two 2‐in. diam GaAs or sapphire wafers per growth run using a horizontal metalorganic chemical vapor deposition (MOCVD) reactor in which the pyrolysis of the organometallics is induc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bfa9b25676a4193f898a3d2e2b10915b
https://doi.org/10.1116/1.576963
https://doi.org/10.1116/1.576963
Publikováno v:
2006 International Conference on Nanoscience and Nanotechnology.
The dilute nitride GaAsN has been grown by MBE using an ECR nitrogen plasma source. This has allowed growth at a substrate temperature of 600 C, which in combination with an ion trap, has produced higher quality as-grown material. Layer chemistry has
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::154268a1a9b75787eb36bd3d5e1541ef
https://doi.org/10.1109/iconn.2006.340621
https://doi.org/10.1109/iconn.2006.340621
Autor:
T. Warminski, G. Stone
Publikováno v:
Technical Digest. CLEO/Pacific Rim'95. The Pacific Rim Conference on Lasers and Electro-Optics.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::16ce6e64d988e7f635f7c6b74adaed2a
https://doi.org/10.1109/cleopr.1995.527142
https://doi.org/10.1109/cleopr.1995.527142
Publikováno v:
1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140).
The minimum V/III flux ratios for stoichiometric growth of In/sub 0.4/Ga/sub 0.6/As on GaAs have been measured from 250 to 500/spl deg/C. It is found that atomic hydrogen interacts strongly with surface As above a threshold temperature of about 300/s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f57d13f833667ab7da6ad39f70835110
https://doi.org/10.1109/commad.1998.791593
https://doi.org/10.1109/commad.1998.791593
Publikováno v:
1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140).
Most epitaxial layer growth involves mismatch between layer and growth substrate, even in the case of nearly lattice matched systems such as GaAs/AlAs. The accurate determination of layer thicknesses and stoichiometry in single and multi-layer hetero
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b4b0a014c4d08679bd5ee71baca3ce9b
https://doi.org/10.1109/commad.1998.791644
https://doi.org/10.1109/commad.1998.791644
Publikováno v:
2000 International Semiconducting and Insulating Materials Conference. SIMC-XI (Cat. No.00CH37046).
Interfacial coherence in low-strained In/sub x/Ga/sub 1-x/As grown on GaAs substrates has been studied and the critical strains corresponding to layer thicknesses of 0.5, 1.0, and 2.0 /spl mu/m have been determined. The measured critical strains exce
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::28381cfa02ab67f633012dee44dd0675
https://doi.org/10.1109/sim.2000.939235
https://doi.org/10.1109/sim.2000.939235
Publikováno v:
Fourth International Conference on Thin Film Physics and Applications.
In this work, we present a new approach to determining Poisson's ratio of AlAs. This approach requires the growth of a particular structure with a multiple quantum well (MQW) - 10X[500 angstroms GaAs/800 angstroms AlxGa1-xAs] followed by two single l
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e99101d3acfad22fc8883b0ab981d290
https://doi.org/10.1117/12.408422
https://doi.org/10.1117/12.408422
Publikováno v:
Journal of Applied Physics. 66:619-624
Ultramicrotome techniques are used to prepare thin cross sections of a {111} epilayer of CdTe deposited by metalorganic chemical vapor deposition onto a {100} GaAs substrate. The structure of these samples is investigated by transmission electron mic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0c2ee1f2162b40effd5109861ea85726
https://doi.org/10.1063/1.343527
https://doi.org/10.1063/1.343527