Zobrazeno 1 - 10
of 100
pro vyhledávání: '"T. W. Haas"'
Autor:
T. W. Haas, D. H. Tomich, J. D. Busbee, H. J. Haugan, L. Grazulis, Kurt G. Eyink, C. J. Eiting, A. M. Cain
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 21:110-115
Alternate substrate technology holds promise for the growth of high-quality lattice-mismatched epitaxial films. Unfortunately, the technology has been plagued by difficulties in reproducibility of results. Some of this problem resides in a lack of ch
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::094b397f0d056cbd121fba54f63ab041
https://doi.org/10.1116/1.1527900
https://doi.org/10.1116/1.1527900
Publikováno v:
Journal of Electronic Materials. 26:391-396
The growth of low temperature (LT) GaAs by molecular beam epitaxy has been studied using ellipsometry. Different regimes of growth were observed in the data, depending on film thickness. Epitaxial growth of pseudomorphic LT-GaAs occurred immediately
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1708c61d58d913d5b788d31f8d6bb116
https://doi.org/10.1007/s11664-997-0108-6
https://doi.org/10.1007/s11664-997-0108-6
Autor:
W. Swider, Jack Washburn, T. W. Haas, Zuzanna Liliental-Weber, W. V. Lampert, Paul H. Holloway, X. W. Lin
Publikováno v:
Thin Solid Films. 253:490-495
Al—Ni—Ge ohmic contacts on n-GaAs(001) were prepared by sequential vapor deposition and subsequent annealing at 500°C. Structural properties were studied as a function of contract composition, by transmission electron microscopy and scanning ele
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::33374c2fa05b7357c71d3d9d9f04d327
https://doi.org/10.1016/0040-6090(94)90372-7
https://doi.org/10.1016/0040-6090(94)90372-7
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 12:1103-1107
The use of sulfur to passivate Al0.3Ga0.7As surfaces to aid in the formation of Au and Al–Ni–Ge ohmic contacts has been studied using current–voltage measurements, Auger electron spectroscopy, and scanning electron microscopy (SEM). After clean
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::531d4d3424e3c7df129144a4a3643362
https://doi.org/10.1116/1.579172
https://doi.org/10.1116/1.579172
Publikováno v:
Journal of Electronic Materials. 22:1387-1390
The molecular beam epitaxial growth of low temperature (LT) GaAs films has been studied by real-time ellipsometry. A modification in a GaAs (001) surface by cooling under a specific As2 flux caused a change in the ellipsometry data. The thermocouple
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d92101e70a0deae5101dcf67f8470cf1
https://doi.org/10.1007/bf02649982
https://doi.org/10.1007/bf02649982
Publikováno v:
Surface and Interface Analysis. 20:531-534
Nomarski photography and x-ray photoelectron spectroscopy have been applied to the study of the effects of low Earth orbit on MgF 2 , ThF 4 and SiO 2 optical coatings. These sample coatings were part of NASA's Long Duration Exposure Facility (LDEF),
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::56461047112477ea7cc8f5df286d822d
https://doi.org/10.1002/sia.740200608
https://doi.org/10.1002/sia.740200608
Integrals, over selected electron energies, E, of magnesium, aluminum, and silicon KLL Auger spectra of magnesium, aluminum, silicon, and their oxides have been measured directly using tailored modulation techniques. The ratios of Auger currents, I(E
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e6cdd7beec0782496662338f938799a8
https://doi.org/10.1520/stp25600s
https://doi.org/10.1520/stp25600s
Photoreflectance of AlxGa1−xAs and AlxGa1−xAs/GaAs interfaces and high‐electron‐mobility transistors
Autor:
Michael Sydor, W. V. Lampert, Neal Jahren, S. M. Mudare, T. W. Haas, Ming‐Yuan Yen, David H. Tomich, W. C. Mitchel
Publikováno v:
Journal of Applied Physics. 67:7423-7429
Photoreflectance is used to measure AlxGa1−xAs composition, and to determine carrier concentrations in Si‐doped AlGaAs epilayers capped with GaAs. Undoped caps are generally depleted, and do not show a usual GaAs photoreflectance. However, photor
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a604cfcba303ab8b228803ca31e77761
https://doi.org/10.1063/1.344532
https://doi.org/10.1063/1.344532
Publikováno v:
Applied Physics Letters. 58:1854-1856
We report on the simultaneous, molecular beam epitaxy growth of GaAs on GaAs(001) and GaAs(111)B substrates at low temperatures. The crystallinity of the low‐temperature GaAs layers was assessed using a double‐crystal x‐ray diffractometer and a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a0a772c6655b45a197af9a766bf77511
https://doi.org/10.1063/1.105078
https://doi.org/10.1063/1.105078
Autor:
M. Y. Yen, T. W. Haas
Publikováno v:
Applied Physics Letters. 56:2533-2535
We have observed intensity oscillations in reflection high‐energy electron diffraction during molecular beam epitaxial growth of GaAs on (111)B GaAs substrates. These oscillations only exist over a narrow range of growth conditions and their behavi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::05e3c9021f90747fc4f3be9ca99f6635
https://doi.org/10.1063/1.102878
https://doi.org/10.1063/1.102878