Zobrazeno 1 - 10
of 44
pro vyhledávání: '"T. V. Tisnek"'
Publikováno v:
Semiconductors. 51:163-167
The low-temperature magnetoresistive effect in the semiconductor HgSe:Fe in weak magnetic fields at microwave frequencies is examined. The negative and positive components of magnetoabsorption based on the magnetoresistive effect in the degenerate co
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c3e3154ccf5d98dc7bad60480781c5c6
https://doi.org/10.1134/s1063782617020233
https://doi.org/10.1134/s1063782617020233
Autor:
S. I. Goloshchapov, T. V. Tisnek, A. I. Veinger, T. L. Makarova, P. V. Semenikhin, A. G. Zabrodskii
Publikováno v:
Semiconductors. 49:1294-1301
The method of superconducting quantum interference device (SQUID) magnetometry is used to measure and study low-temperature (T ≤ 100K) susceptibility in a series of samples of heavily doped Ge:As samples on the insulator side of the insulator–met
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9f186b87cea6421a8cdad6d28fc1ebdd
https://doi.org/10.1134/s1063782615100267
https://doi.org/10.1134/s1063782615100267
Determination of the magnetic susceptibility of 'poor' conductors by electron paramagnetic resonance
Publikováno v:
Technical Physics. 58:1806-1811
We consider a method for determining the magnetic susceptibility of “poor” conductors using electron paramagnetic resonance data. A method is described on the basis of double integration of the positive part of the derivative of the absorption li
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::31e914fa7f3f7cd252cb53930ba1dcf1
https://doi.org/10.1134/s1063784213120256
https://doi.org/10.1134/s1063784213120256
Autor:
S. I. Goloshchapov, A. I. Veinger, A. G. Zabrodskii, T. V. Tisnek, T. L. Makarova, P. V. Semenikhin
Publikováno v:
Journal of Experimental and Theoretical Physics. 116:796-799
The phenomenon of the low-temperature transition from antiferro- to ferromagnetic ordering of impurity spins in a nonmagnetic compensated n-Ge:As semiconductor near the metal-insulator phase transformation has been experimentally observed. The effect
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ea6e239e480d2ab9c326354835b7d099
https://doi.org/10.1134/s1063776113050142
https://doi.org/10.1134/s1063776113050142
Publikováno v:
Semiconductors. 45:1264-1272
The microwave magnetoresistivity of lightly doped (nondegenerate) p-Ge has been studied by the electron spin resonance method. This technique can be employed to record the derivative of the microwave absorption with respect to the magnetic field on t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a86ccb2d8cbdf2d49f273fc5624a4208
https://doi.org/10.1134/s106378261110023x
https://doi.org/10.1134/s106378261110023x
Publikováno v:
Semiconductors. 44:705-711
A study of electron spin resonance in uncompensated Ge:As semiconductor samples in the vicinity of the insulator-metal second-order phase transiti on reveals that the interaction of spins localized at As atoms brings about a distortion of the crystal
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::009413f2c312908f5507107fc7d954ae
https://doi.org/10.1134/s1063782610060035
https://doi.org/10.1134/s1063782610060035
Publikováno v:
Applied Magnetic Resonance. 35:439-448
A low-temperature (3–100 K) electron spin resonance (ESR) study of the spin system of neutral As donors in Ge showed that on the insulator side of the insulator-metal transition the single-spin density exponentially disappears as T → 0. Such spin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d3d3f7620bfcf08ad78868f165673c3f
https://doi.org/10.1007/s00723-009-0175-3
https://doi.org/10.1007/s00723-009-0175-3
Publikováno v:
Semiconductors. 42:1274-1281
The effect of spin interaction on the width and shape of the electron spin resonance line in compensated and uncompensated n-Ge:As has been studied. It is shown that, in the case of a magnetic field oriented along the [100] axis, the width of the res
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::467e7987cd2cb8c31f0894e98f3d3590
https://doi.org/10.1134/s1063782608110055
https://doi.org/10.1134/s1063782608110055
Publikováno v:
physica status solidi c. 5:824-828
It is shown that, on the insulator side of the insulator – metal transition, the single spin density exponentially disappears as T 0. Such spins are bound into pairs to give an antiferromagnetic (AFM) phase. Upon an increase in temperature the AFM
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5bb2c13aa82ced645c5838ece62ca25e
https://doi.org/10.1002/pssc.200777591
https://doi.org/10.1002/pssc.200777591
Publikováno v:
Semiconductors. 41:790-798
The changes in the spectrum and g factor of electron spin resonance due to the interaction of spins in the insulator state of n-Ge near the insulator-metal phase transition are studied. It is found that, in this region, the g factor decreases as the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1728815b6acb445bf8b117f59932b2dd
https://doi.org/10.1134/s1063782607070044
https://doi.org/10.1134/s1063782607070044