Zobrazeno 1 - 8
of 8
pro vyhledávání: '"T. V. Petlitskaya"'
Autor:
P. A. Kholov, N. V. Gaponenko, K. V. Shaidakova, V. I. Krymski, V. A. Filipenya, T. V. Petlitskaya, V. V. Kolos, A N. Pyatlitski
Publikováno v:
Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki, Vol 18, Iss 1, Pp 74-80 (2020)
The objective of the work is investigation the dielectric permittivity and dielectric loss tangent of BaTiO3 films in a capacitor structure formed by sol – gel method on a Si/TiOx/Pt substrate. The basis of this capacitor is a four-layer film of ba
Externí odkaz:
https://doaj.org/article/96b1f395a79e44028a37d912887eb71d
Autor:
T. V. Petlitskaya, S. Kh. Suleymanov, A. N. Petlitskii, V. G. Dyskin, V.F. Gremenok, M. U. Djanklich, N. A. Kulagina, V. A. Ivanov
Publikováno v:
Applied Solar Energy. 56:186-191
In this study, a technology producing undoped crystalline zinc oxide films with purposefully changed electrical resistance ρ = 3 × 10–4–1 × 107 Ω cm has been developed. The relationship between the electrical characteristics of ZnO layers and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::19ce9270e4ae68ae1bd04f8d39ed4864
https://doi.org/10.3103/s0003701x20030044
https://doi.org/10.3103/s0003701x20030044
Autor:
V. P. Kladko, Alexander Belyaev, A. S. Pilipchuk, T. V. Petlitskaya, V. V. Shynkarenko, A. S. Slepova, R. V. Konakova, A. I. Lubchenko, A. V. Sachenko, N. V. Safryuk-Romanenko, V. N. Sheremet, N. S. Boltovets, V. A. Pilipenko
Publikováno v:
Semiconductors. 53:469-476
The temperature dependences of the specific contact resistance of silicon ρc with a doping step are measured experimentally and described theoretically. The measurements are performed in the temperature range from 4.2 to 380 K. It is established tha
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::766592e50af9e45ad372def64e916923
https://doi.org/10.1134/s1063782619040055
https://doi.org/10.1134/s1063782619040055
Autor:
S. R. Syrtsov, Yu. V. Medvedeva, V. M. Laletin, V. L. Trublovsky, V. N. Shut, Kazimir Yanushkevich, T. V. Petlitskaya, M. V. Bushinskii
Publikováno v:
Physics of the Solid State. 60:1744-1751
The phase composition, microstructure, and dielectric, ferroelectric, magnetic, and magnetoelectric properties of bulk ceramic (1 – x)PZT–xNiFe1.9Co0.02О4 – δ composites with 3–0 connectivity have been studied. Using X-ray diffraction and e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2162566e830bc4db5da1854af179f87d
https://doi.org/10.1134/s1063783418090317
https://doi.org/10.1134/s1063783418090317
Autor:
Alexander Belyaev, A. O. Vinogradov, T. V. Petlitskaya, A. V. Sachenko, R. V. Konakova, Ya. Ya. Kudryk, V. N. Sheremet, V. A. Anischik, V. A. Pilipenko, N. S. Boltovets
Publikováno v:
Semiconductors. 48:492-496
It is experimentally found that an ohmic contact based on Au-Pt-Ti-Pd-n + �Si metallization is formed due to nanoscale metal shunts containing Si, Au, and Pt in the region of the interface with n + �Si, which appears during heat treatment at T =
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::899594a10e89fabb8d74841e42392334
https://doi.org/10.1134/s1063782614040241
https://doi.org/10.1134/s1063782614040241
Publikováno v:
Journal of Engineering Physics and Thermophysics. 81:622-626
Results of the use of nanosecond laser pulses in the technology of production of very-large-scale integration circuits are presented. It is shown that, depending on the conditions of processing of silicon by these pulses, they can avoid mechanical fa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f3bd666e1f9664e7d0abd1ebcb766394
https://doi.org/10.1007/s10891-008-0078-4
https://doi.org/10.1007/s10891-008-0078-4
Publikováno v:
Journal of Engineering Physics and Thermophysics. 80:617-624
A model for calculation of the parameters of a bipolar transistor has been proposed and the regularities of their change in fast thermal treatment of ion-doped silicon layers have been established.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::422d4d35acf4bb4f0aa3c930a6f3742c
https://doi.org/10.1007/s10891-007-0081-1
https://doi.org/10.1007/s10891-007-0081-1
Publikováno v:
Journal of Engineering Physics and Thermophysics. 76:193-196
A variant of a combined dielectric for the condensers of very large‐scale integrated circuits (VLSICs) has been proposed. Its electrophysical and mechanical properties have been analyzed. The influence of the thickness of each of the dielectrics on
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5f792216614aed76cda692018774a2fe
https://doi.org/10.1023/a:1022904316914
https://doi.org/10.1023/a:1022904316914