Zobrazeno 1 - 10
of 17
pro vyhledávání: '"T. V. Perevalov"'
Autor:
D. R. Islamov, T. V. Perevalov, A. A. Gismatulin, I. A. Azarov, E. V. Spesivtsev, V. A. Gritsenko
Publikováno v:
Journal of Experimental and Theoretical Physics. 136:345-352
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8f10f01b7df6e82291a8a86a79e50560
https://doi.org/10.1134/s1063776123030135
https://doi.org/10.1134/s1063776123030135
Autor:
T. V. Perevalov, A. A. Gismatulin, V. A. Gritsenko, H. Xu, J. Zhang, K. A. Vorotilov, M. R. Baklanov
Publikováno v:
Journal of Electronic Materials. 51:2521-2527
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::641f5a0fe42abf9e8ef6ebdcd54fe41a
https://doi.org/10.1007/s11664-021-09411-8
https://doi.org/10.1007/s11664-021-09411-8
Publikováno v:
JETP Letters. 115:79-83
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1221f5af29866e7ae6b7459969709f3e
https://doi.org/10.1134/s0021364022020084
https://doi.org/10.1134/s0021364022020084
Publikováno v:
Nanotechnology. 32(18)
The influence of oxygen content in active zirconium oxide layers on the electrophysical properties of TaN/ZrO
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::b6723841bd24488ffc607abdfe25303d
https://pubmed.ncbi.nlm.nih.gov/33620032
https://pubmed.ncbi.nlm.nih.gov/33620032
Autor:
Vitalii, Voronkovskii, Vladimir, Aliev, Alina, Gerasimova, Timofey T V, Perevalov, Igor' P, Prosvirin, Damir R, Islamov
Publikováno v:
Nanotechnology.
The influence of oxygen content in active zirconium oxide layers on the electrophysical properties of TaN/ZrO
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::3dfe7e98a6b485164383de92a1e45fb9
https://pubmed.ncbi.nlm.nih.gov/33246324
https://pubmed.ncbi.nlm.nih.gov/33246324
Publikováno v:
Nanotechnology. 29(19)
The electronic structure of oxygen-deficient Hf
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::55e635a335a6e0378390843a61a265c6
https://pubmed.ncbi.nlm.nih.gov/29393855
https://pubmed.ncbi.nlm.nih.gov/29393855
In this study, we demonstrated experimentally and theoretically that the charge transport mechanism in amorphous Hf$_{0.5}$Zr$_{0.5}$O$_2$ is phonon-assisted tunneling between traps like in HfO$_2$ and ZrO$_2$. The thermal trap energy of 1.25 eV and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::450d3722d01099a97a324e24dd8ee423
Autor:
T. V. Perevalov, Vladimir A. Gritsenko
Publikováno v:
2010 27th International Conference on Microelectronics Proceedings.
Electronic structure of oxygen vacancies and poly-vacancies in high-k dielectric Al 2 O 3 (α- and γ- phases) was calculated from the first principles. It was found, that oxygen vacancies can be both electron and hole trap in α- and γ-Al 2 O 3 . O
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::95485ef58d7c2674580044dd6286f430
https://doi.org/10.1109/miel.2010.5490517
https://doi.org/10.1109/miel.2010.5490517
Publikováno v:
Materials Research Express; Mar2019, Vol. 6 Issue 3, p1-1, 1p
Autor:
T V Perevalov, V A Gritsenko, A A Gismatulin, V A Voronkovskii, A K Gerasimova, V Sh Aliev, I A Prosvirin
Publikováno v:
Nanotechnology; 6/29/2018, Vol. 29 Issue 26, p1-1, 1p