Zobrazeno 1 - 3
of 3
pro vyhledávání: '"T. V. Lytvynchuk"'
Autor:
E. G. Len, I. M. Fodchuk, V. B. Molodkin, T. P. Vladimirova, T. V. Lytvynchuk, E. V. Kochelab, Volodymyr Dovganyuk, B. V. Sheludchenko, E. N. Kislovskii, S. V. Lizunova, O. V. Reshetnyk, V. P. Kladko, S. I. Olikhovskii
Publikováno v:
Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques. 7:523-530
The quantitative diagnostics of complex defect structures in silicon crystals grown by the Czochralski method and irradiated with different doses of high-energy electrons (18 MeV) is performed by methods of high-resolution X-ray diffraction. The anal
Autor:
V. B. Molodkin, O. V. Reshetnyk, Z. Świątek, E. G. Len, S. I. Olikhovskii, Volodymyr Dovganyuk, V. P. Kladko, T. P. Vladimirova, T. V. Lytvynchuk, Ye. M. Kyslovskyy, I. M. Fodchuk, E. V. Kochelab, B. V. Sheludchenko, S. V. Lizunova
Publikováno v:
physica status solidi (a). 208:2552-2557
The quantitative characterization of complex microdefect structures in silicon crystals grown by Czochralski method and irradiated with various doses of high-energy electrons (18 MeV) has been performed by methods of the high-resolution X-ray diffrac
Publikováno v:
SPIE Proceedings.
Methods of two- and three-crystal X-ray high-resolution diffractometry were used to investigate structural changes in Cz-Si single crystals irradiated with high-energy electrons (E=18 MeV). The results of experimental investigation were interpreted b