Zobrazeno 1 - 6
of 6
pro vyhledávání: '"T. V. Kritskaya"'
Publikováno v:
Izvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering. 24:5-26
Novel technical solutions and ideas for increasing the yield of solar and semiconductor grade polycrystalline silicon processes have been analyzed. The predominant polycrystalline silicon technology is currently still the Siemens process including th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2d074373ba87d923a87316f4c7ad13f1
https://doi.org/10.17073/1609-3577-2021-1-5-26
https://doi.org/10.17073/1609-3577-2021-1-5-26
Publikováno v:
Izvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering. 22:158-167
The process of growing silicon single crystals by the Czochralski method has been improved, which involves the use of two argon streams. 1st, the main flow, 15—20 nl/min, is directed from top to bottom along the growing single crystal. It captures
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ae917ab87dd910f9eb0d2fbad31b591e
https://doi.org/10.17073/1609-3577-2019-3-158-167
https://doi.org/10.17073/1609-3577-2019-3-158-167
Publikováno v:
Russian Microelectronics. 43:546-551
The characteristics of low-power and power thyristors based on dislocation-free single crystals of germanium-doped silicon in the range of concentrations N Ge ∼ (0.05–1.5) × 1020 cm−3 are presented. Using the methods of processing of the exper
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::304363b88778c72d996ec3bcbc80f539
https://doi.org/10.1134/s1063739714080046
https://doi.org/10.1134/s1063739714080046
Autor:
N. S. Boltovets, A. V. Zorenko, V. V. Milenin, T. V. Korostinskaya, Andrian Kuchuk, T. V. Kritskaya, R. V. Konakova, V. P. Kladko, Alexander Belyaev, A. B. Ataubaeva, N. V. Kolesnik, L. M. Kapitanchuk, Ya. Ya. Kudryk, V.V. Basanets
Publikováno v:
Semiconductors. 45:253-259
The thermal limits of the two-drift impact avalanche and transit-time (IMPATT) diode operating in the pulsed mode in the 8-mm wavelength region with a microwave power as high as 30–35 W have been estimated. It is shown that p-n junction overheat at
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7c445a655facca657b0b9af452abb82d
https://doi.org/10.1134/s1063782611020047
https://doi.org/10.1134/s1063782611020047
Autor:
Konstantinos Zekentes, K. V. Vasilevskii, A.V. Zorenko, T. V. Kritskaya, N. S. Boltovets, A. V. Bludov, Valentyn A. Krivutsa, A. A. Lebedev
Publikováno v:
Technical Physics Letters. 30:123-125
Problems pertaining to the modeling and development of a microwave modulator based on 4H-SiC p-i-n diodes are considered. The results of theoretical and experimental investigations of the microwave characteristics of 4H-SiC p-i-n diodes and the param
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::31a5b52da81f9732e60aa1b2c1bc16ab
https://doi.org/10.1134/1.1666959
https://doi.org/10.1134/1.1666959
Publikováno v:
Scopus-Elsevier
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::affc99d348058618b3f1af832aab1a3b
http://www.scopus.com/inward/record.url?eid=2-s2.0-33846497452&partnerID=MN8TOARS
http://www.scopus.com/inward/record.url?eid=2-s2.0-33846497452&partnerID=MN8TOARS
