Zobrazeno 1 - 10
of 11
pro vyhledávání: '"T. V. Herak"'
Autor:
Douglas A. Buchanan, Douglas J. Thomson, Robert D. McLeod, S.R. Mejia, K. C. Kao, T.T. Chau, T. V. Herak
Publikováno v:
IEEE Transactions on Electrical Insulation. 25:593-598
High-quality silicon dioxide films were deposited on a silicon substrate from an electron cyclotron resonant microwave plasma under the followiag conditions: substrate temperatures of 150 to 320'C, flow rates of 1.0 sccm of 10% SiH4 in Ar and 5.0 scc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4cc9cb22875c316423a4f729e60f4efe
https://doi.org/10.1109/14.55737
https://doi.org/10.1109/14.55737
Autor:
Douglas J. Thomson, T. V. Herak
Publikováno v:
Journal of Applied Physics. 67:6347-6352
Silicon dioxide films have been fabricated at growth temperatures ranging from 25 to 330 °C from an electron cyclotron resonant microwave plasma. Films were deposited from a SiH4/Ar/N2O reactant gas mixture. The minimum temperature required to fabri
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cf056e369c364e2f5b34047e082b0436
https://doi.org/10.1063/1.345155
https://doi.org/10.1063/1.345155
Autor:
Douglas J. Thomson, T. V. Herak, Douglas A. Buchanan, S.R. Mejia, K. C. Kao, Robert D. McLeod, T.T. Chau
Publikováno v:
Proceedings., Second International Conference on Properties and Applications of Dielectric Materials.
Silicon dioxide films were deposited on crystalline silicon substrates by microwave plasma-enhanced CVD. An axial DC magnetic field in the plasma chamber produced electron cyclotron resonance (ECR) conditions at an excitation frequency of 2.45 GHz. F
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::98870b913b1eeaaf3048d6537a193865
https://doi.org/10.1109/icpadm.1988.38367
https://doi.org/10.1109/icpadm.1988.38367
Publikováno v:
Applied Physics Letters. 62:2486-2488
Chemically assisted ion beam etching (CAIBE) has been used to etch InGaAsP/InP ridge laser facets. Smooth, vertical facets 4 μm deep have been etched using Ar/Cl2 CAIBE with a beam voltage of 440 V and a beam current density of 0.08 mA/cm2. Room tem
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cfdcb1094b7c60503682dcda622f9189
https://doi.org/10.1063/1.109327
https://doi.org/10.1063/1.109327
Autor:
Steven Dzioba, S. Livermore, R. Rousina, M. Young, J. P. D. Cook, F. R. Shepherd, S. Jatar, T. V. Herak
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 12:2848
Chemically assisted ion beam etching (CAIBE) and electron cyclotron resonance (ECR) plasma deposition have been used to etch and coat 1.3 μm InGaAsP/InP heterostructure lasers in full wafer form. Ar/Cl2 CAIBE, using an ECR dual grid ion source, was
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::007515ffb002cafcd592cd2c1bee2d59
https://doi.org/10.1116/1.587203
https://doi.org/10.1116/1.587203
Publikováno v:
Journal of Applied Physics. 65:2457-2463
Silicon dioxide films were deposited on crystalline silicon substrates by electron cyclotron resonant (ECR) microwave plasma‐enhanced chemical vapor deposition (PECVD). Films were grown on Si〈100〉 substrates at temperatures of 140–600 °C, fl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::74c4d91e715a863bcdbea388537e6203
https://doi.org/10.1063/1.342815
https://doi.org/10.1063/1.342815
Autor:
R. D. McLeod, T. V. Herak, H. Watanabe, K. C. Kao, M. G. Collett, Y. Shibata, H. C. Card, Kazuhisa Katoh, M. Yasui
Publikováno v:
Canadian Journal of Physics. 63:846-851
The optical and electronic properties of a-SiNx:H alloy films fabricated by rf glow discharge have been measured for 0 ≤ x ≤ 0.6. The material is dispersive over the range of photon energies 0.5 ≤ hv ≤ 3.5 eV. The optical gap is about 1.65 eV
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8cc5c58ca7c0f0af7017d109a8d9deee
https://doi.org/10.1139/p85-137
https://doi.org/10.1139/p85-137
Autor:
M. Yasui, H. Watanabe, Y. Shibata, T. V. Herak, K. C. Kao, Kazuhisa Katoh, Howard C. Card, Robert D. McLeod
Publikováno v:
Journal of Non-Crystalline Solids. 69:39-48
The electrical and optical properties of a-SiN x :H thin films prepared by rf growth-discharge in SiH 4 N 2 H 2 without B or P doping have been measured for 0 x ⪅ 0.6. It is observed that the activation energy for extended-state electron cond
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5c4ef13e5ced521237bf0c61ca3f3002
https://doi.org/10.1016/0022-3093(84)90121-2
https://doi.org/10.1016/0022-3093(84)90121-2
Publikováno v:
Journal of Applied Physics. 64:688-693
Spectroscopic ellipsometry and x‐ray diffraction measurements have been used to obtain structural information on hydrogenated amorphous and microcrystalline silicon thin films. The films were deposited onto quartz substrates from a microwave plasma
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a8539fd5e3228a4c0d387a9628f7d4d5
https://doi.org/10.1063/1.341962
https://doi.org/10.1063/1.341962
Autor:
T.T. Chau, P. K. Shufflebotham, Howard C. Card, K. C. Kao, T. V. Herak, James Schellenberg, Robert D. McLeod, S. R. Mejia
Publikováno v:
Journal of Non-Crystalline Solids. :277-280
The optical, electronic, and structural properties of a-Si:H films deposited by ECR microwave plasmas at 10−3 torr have been studied as functions of substrate bias. Films deposited on quartz and stainless steel substrates with their surfaces normal
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1e1a351eccd8b060041085c4b309a021
https://doi.org/10.1016/0022-3093(87)90066-4
https://doi.org/10.1016/0022-3093(87)90066-4