Zobrazeno 1 - 2
of 2
pro vyhledávání: '"T. V. Bezjazychnaja"'
Autor:
E. V. Lutsenko, A. L. Gurskii, T. V. Bezjazychnaja, Vitaly Z. Zubialevich, Bernd Schineller, G. P. Yablonskii, V. M. Zelenkovskii, O. Schön, V. N. Pavlovskii, Michael Heuken
Publikováno v:
physica status solidi (c). :425-429
Near-band-edge photoluminescence and reflection spectra have been investigated in GaN grown on Si and Al2O3 substrates. It has been found that the doping of GaN both with Si and Mg reduces the value of compressive strain in GaN/Al2O3. In GaN/Si, no e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d81f937c65e874482d804fc86b37ce9a
https://doi.org/10.1002/pssc.200390079
https://doi.org/10.1002/pssc.200390079
Autor:
V. M. Zelenkovskii, A. L. Gurskii, T. V. Bezjazychnaja, G. P. Yablonskii, Michael Heuken, K. Heime, H. Körfer, H. Hamadeh
Publikováno v:
Journal of Electronic Materials. 29:430-435
The reconstruction of the bound excitonic spectra of MOVPE-grown ZnSe:N samples caused by thermal annealing was observed. The results of the low temperature photoluminescence, reflection and SIMS measurements show that this reconstruction is caused n
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e24ac3eb8b2e37340863e07cba637fe4
https://doi.org/10.1007/s11664-000-0156-7
https://doi.org/10.1007/s11664-000-0156-7