Zobrazeno 1 - 10
of 10
pro vyhledávání: '"T. U. Kampen"'
Publikováno v:
The European Physical Journal B. 7:1-4
Clean, ordered, and stoichiometric GaN\(\) surfaces are obtained after exposure to a Ga-flux followed by annealing in ultrahigh vacuum (UHV), after desorption of a Ga layer deposited at room-temperature or after nitrogen ion-bombardment and annealing
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f90e53ee456cd2a83f87b7da41ea73f6
https://doi.org/10.1007/s100510050583
https://doi.org/10.1007/s100510050583
Publikováno v:
Surface Science. 365:443-452
The composition of {0001} surfaces of 6HSiC samples was studied by using low-energy electron diffraction, Auger electron (AES), and X-ray photoelectron spectroscopy (XPS/SXPS). The samples were cleaned in ultrahigh vacuum by heating them either in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cfe5c8a55e0e092f4807c5f55daa596d
https://doi.org/10.1016/0039-6028(96)00707-8
https://doi.org/10.1016/0039-6028(96)00707-8
Publikováno v:
Journal of Applied Physics. 79:316-321
The adsorption of cesium on clean {0001} surfaces of n‐ and p‐6H‐SiC samples at low temperatures was investigated by using Auger electron, x‐ray photoelectron, and ultraviolet photoelectron spectroscopy as well as a Kelvin probe. At clean sur
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5af96d437624e8cdfc3acfcd0bfb29b0
https://doi.org/10.1063/1.360832
https://doi.org/10.1063/1.360832
Publikováno v:
Applied Physics A Materials Science & Processing. 60:391-394
Schottky contacts were prepared by evaporation of silver on H-terminated Si(111) surfaces at room temperature. The Si(111)∶H-(1×1) surfaces were obtained by wet-chemical etching in buffered hydrofluoric acid. The zero-bias barrier heights and the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c75491146a88293251e22b602f1c5157
https://doi.org/10.1007/bf01538339
https://doi.org/10.1007/bf01538339
Publikováno v:
Applied Physics A: Materials Science & Processing. 60:391-394
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::47c109831b43c6a43a7981b8821b211d
https://doi.org/10.1007/s003390050117
https://doi.org/10.1007/s003390050117
Publikováno v:
Surface Science. 324:249-256
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d12508556e18eba5d13a44ae8e98f36f
https://doi.org/10.1016/0039-6028(94)00791-8
https://doi.org/10.1016/0039-6028(94)00791-8
Autor:
T. U. Kampen, W. Mönch
Publikováno v:
Physical Review B. 46:13309-13312
Chemisorption of hydrogen atoms on GaAs(110) surfaces at 140 K was found to decrease their ionization energy. The experimental results are explained by the formation of Ga-H and As-H surface dipoles and a simultaneous removal of the clean-surface til
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::cc73fb235f1773e44366160ab6477753
https://doi.org/10.1103/physrevb.46.13309
https://doi.org/10.1103/physrevb.46.13309
Publikováno v:
Springer Proceedings in Physics ISBN: 9783642639937
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a92b42301f44a2e644dc03953396d72f
https://doi.org/10.1007/978-3-642-59484-7_193
https://doi.org/10.1007/978-3-642-59484-7_193
Autor:
T. U. Kampen, W. Mönch
Publikováno v:
Scopus-Elsevier
The Schottky barrier heights of silver and lead contacts on n-type GaN (0001) epilayers were determined from current-voltage characteristics. The zero-bias barrier heights and the ideality factors were found to be linearly correlated. Similar observa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::853716c33d03cfc2493f9c3581ea09f4
https://doi.org/10.1557/s1092578300002131
https://doi.org/10.1557/s1092578300002131
Publikováno v:
Scopus-Elsevier
A new and simple-to-use method to obtain homogeneous Schottky barrier heights from effective barrier heights and ideality factors that are determined from current-voltage (I-V) characteristics of metal-semiconductor contacts is presented. This approa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::70074451cc9bc766e1bd51c7ce28e40c
http://www.scopus.com/inward/record.url?eid=2-s2.0-0000113985&partnerID=MN8TOARS
http://www.scopus.com/inward/record.url?eid=2-s2.0-0000113985&partnerID=MN8TOARS