Zobrazeno 1 - 10 of 22 pro vyhledávání: '"T. Troffer"'
1
Photoluminescence and transport studies of boron in 4H SiC
Autor: L. L. Clemen, Wolfgang J. Choyke, Gerhard Pensl, David J. Larkin, H. S. Kong, Robert P. Devaty, T. Troffer, S. G. Sridhara
Publikováno v: Journal of Applied Physics. 83:7909-7919
Two distinct boron-related centers are known in silicon carbide polytypes, one shallow (ionization energy ∼300 meV) and the other deep (∼650 meV). In this work, 4H SiC homoepitaxial films are intentionally doped with the shallow boron center by c
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::454b0a5a0992e402f9528217a89298a6
https://doi.org/10.1063/1.367970
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4
Electrical Characterization of the Gallium Acceptor in 4H- and 6H-SiC
Autor: Anne Henry, Olof Kordina, Gerhard Pensl, Adolf Schöner, T. Troffer, Christer Hallin, Erik Janzén
Publikováno v: Materials Science Forum. :557-560
4H- and 6H-SiC CVD layers were gallium-doped either by ion implantation or in situ during the growth process and were characterized by means of Hall effect and admittance spectroscopy. The concentration of electrically active Ga in the implanted laye
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::1bb1f47c837f41a7260560ebefb59d76
https://doi.org/10.4028/www.scientific.net/msf.264-268.557
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8
Phosphorus‐related donors in 6H‐SiC generated by ion implantation
Autor: T. Troffer, K. Rottner, Adolf Schöner, C. Peppermüller, Gerhard Pensl
Publikováno v: Journal of Applied Physics. 80:3739-3743
Aluminum‐doped 6H‐SiC epilayers were implanted with phosphorus and subsequently annealed in a temperature range from 1400 to 1700 °C. The annealing behavior of implanted phosphorus atoms was studied by the Hall effect, admittance spectroscopy, a
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::0bb2b246010dccf950b30eb61d03ce29
https://doi.org/10.1063/1.363325
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10
Doping of SiC by implantation of Boron and Aluminum
Autor: Horst P. Strunk, T. Troffer, M. Schadt, Gerhard Pensl, M. Maier, H. Itoh, J. Heindl, Thomas Frank
Experimental studies on aluminum (Al) and boron (B) implantation in 4H/6H SiC are reported; the implantation is conducted at room temperature or elevated temperatures (500 to 700 C). Both Al and B act as ``shallow`` acceptors in SiC. The ionization e
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0d0f47c0c39addb635a9711d1bfc478f
https://publica.fraunhofer.de/handle/publica/190162
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