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Cyclic deep reactive ion etching with mask replenishment

Autor: Sangcheol Kim, Dennis W. Prather, Thomas N. Adam, P.-C. Lv, Samit K. Ray, G. Xuan, James Kolodzey, R. T. Troeger

Publikováno v: Journal of Micromechanics and Microengineering. 17:1773-1780

A multi-step reactive ion etching (MS-RIE) process for silicon was developed for the fabrication of deep anisotropic, closely packed structures with vertical sidewalls. This process used repeated cycles of etching and the replenishment of masking lay

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::0c2fcb6df2dfe1010adb8ac9c0280949
https://doi.org/10.1088/0960-1317/17/9/004

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A 14nm logic technology featuring 2nd-generation FinFET, air-gapped interconnects, self-aligned double patterning and a 0.0588 µm2 SRAM cell size

Publikováno v: 2014 IEEE International Electron Devices Meeting.

A 14nm logic technology using 2nd-generation FinFET transistors with a novel subfin doping technique, self-aligned double patterning (SADP) for critical patterning layers, and air-gapped interconnects at performance-critical layers is described. The

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::6a3dec100c56e7fcbb7cfef517ecf3b6
https://doi.org/10.1109/iedm.2014.7046976

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Capacitance study of selectively doped SiGe/Si heterostructures

Autor: V I Obodnikov, R. T. Troeger, Samit K. Ray, Irina V. Antonova, Miron S. Kagan, James Kolodzey

Publikováno v: Semiconductor Science and Technology. 20:335-339

Capacitance studies of Si/Si1?xGex/Si heterostructures with three Si1?xGex layers selectively doped with boron are presented. A surface charge and carrier distributions in Si1?xGex/Si heterostructures were found as a function of Ge content. The large

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::21bcc77642fac492971654b5cbdb2188
https://doi.org/10.1088/0268-1242/20/5/001

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Characteristics of THz waves and carrier scattering in boron-doped epitaxial Si and Si1−xGex films

Autor: R. T. Troeger, James Kolodzey, G. Looney, Arye Rosen, Thomas N. Adam, Samit K. Ray

Publikováno v: Journal of Applied Physics. 95:5301-5304

The absorption and reflection characteristics of boron-doped silicon and silicon-germanium alloys have been investigated in the frequency range from 1.6 to 60 THz. The absorption increases with doping concentration, in agreement with free carrier eff

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::1dff919cad742db98a7df6cbda7794d5
https://doi.org/10.1063/1.1690487

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TERAHERTZ EMITTERS AND DETECTORS BASED ON SiGe NANOSTRUCTURES

Autor: J. KOLODZEY, T. N. ADAM, R. T. TROEGER, P.-C. LV, S. K. RAY, I. YASSIEVICH, M. ODNOBLYUDOV, M. KAGAN

Publikováno v: International Journal of Nanoscience. :171-176

Terahertz (THz) electroluminescence was produced by three different types of sources: intersubband transitions in silicon germanium quantum wells, resonant state transitions in boron-doped strained silicon germanium layers, and hydrogenic transitions

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::17141fc243d8d2a112f28fd5f0808ba2
https://doi.org/10.1142/s0219581x0400195x

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Effect of potential and doping profiles on excitation of stimulated THz emission of SiGe/Si quantum-well structures

Autor: Miron S. Kagan, Irina Yassievich, A. A. Prokofiev, R. T. Troeger, E. G. Chirkova, Samit K. Ray, James Kolodzey, M. A. Odnoblyudov, I. V. Altukhov, V. P. Sinis

Publikováno v: Physica B: Condensed Matter. :831-834

Studies of stimulated THz emission from boron-doped Si/Si1� xGex/n-Si quantum-well (QW) structures of various potential and doping profiles are presented. In the single-QW structures with the optical resonator, the stimulated THz emission is observ

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::bf9f37a8c5d700a03add06fc174e8d3f
https://doi.org/10.1016/j.physb.2003.09.219

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THz lasing due to resonant acceptor states in strained p-Ge and SiGe quantum-well structures

Autor: Miron S. Kagan, R. T. Troeger, E. G. Chirkova, I. V. Altukhov, V. P. Sinis, Samit K. Ray, James Kolodzey

Publikováno v: physica status solidi (b). 235:293-296

An intense THz emission was observed from strained SiGe/Si quantum-well structures under a strong pulsed electric field. The p-type structures were MBE-grown on n-type Si substrates and δ-doped with boron. Lines with wavelengths near 100 microns wer

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::af0a5b12acaf4987984a041a72abfb9f
https://doi.org/10.1002/pssb.200301571

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THz lasing of SiGe/Si quantum-well structures due to shallow acceptors

Autor: I. V. Altukhov, Miron S. Kagan, E. G. Chirkova, James Kolodzey, V. P. Sinis, Samit K. Ray, R. T. Troeger

Publikováno v: physica status solidi (b). 235:135-138

An intense THz emission was observed from strained SiGe/Si quantum-well structures under strong pulsed electric field. The p-type structures were MBE-grown on n-type Si substrates and δ-doped with boron. Lines with wavelengths near 100 microns were

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::533a77881e86ec49b95c8e84f443b60d
https://doi.org/10.1002/pssb.200301536

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