Zobrazeno 1 - 10
of 47
pro vyhledávání: '"T. Torunski"'
Publikováno v:
Journal of Crystal Growth. 298:98-102
A novel method is presented which allows to expose and investigate interior interfaces in the Ga(NAsP)/GaP material system by a combination of highly selective etching and subsequent atomic force microscopy. We demonstrate the selectivity of the chem
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::37347775e010c77dc255877425f4148c
https://doi.org/10.1016/j.jcrysgro.2006.10.008
https://doi.org/10.1016/j.jcrysgro.2006.10.008
Publikováno v:
Ultramicroscopy. 163
The introduction of preparation artifacts is almost inevitable when producing samples for (scanning) transmission electron microscopy ((S)TEM). These artifacts can be divided in extrinsic artifacts like damage processes and intrinsic artifacts caused
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5ff402a9e700f005367cef2afc2b5f7f
https://pubmed.ncbi.nlm.nih.gov/26855206
https://pubmed.ncbi.nlm.nih.gov/26855206
Autor:
T. Torunski, Kerstin Volz, C. Baur, Oleg Rubel, D. Lackner, Frank Dimroth, S. Müller, Wolfgang Stolz, Andreas W. Bett
Publikováno v:
Journal of Solar Energy Engineering. 129:266-271
The dilute nitride (GaIn)(NAs) material system grown lattice matched to GaAs or Ge with a 1eV band gap is an interesting material for the use in four-junction solar cells with increased efficiencies. As a result of its metastability, several challeng
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6fea6c4c5f06ea41af54f5317ca42b60
https://doi.org/10.1115/1.2734568
https://doi.org/10.1115/1.2734568
Autor:
Bernardette Kunert, S. Nau, Kerstin Volz, S. Reinhard, Wolfgang Stolz, Oleg Rubel, T. Torunski
Publikováno v:
Journal of Crystal Growth. 272:739-747
We have grown (GaIn)(NAs) lattice-matched bulk as well as compressively strained multi-quantum-well structures by metal-organic vapour-phase epitaxy (MOVPE) suitable for either solar cell or laser applications, respectively. By applying a specific no
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::162e040d615c65060c8f810aa716642a
https://doi.org/10.1016/j.jcrysgro.2004.09.012
https://doi.org/10.1016/j.jcrysgro.2004.09.012
Publikováno v:
Journal of Crystal Growth. 261:330-335
We have investigated surface morphologies and cluster formation in Mn-incorporated (GaIn)As layers grown by metal-organic vapor phase epitaxy (MOVPE) on InP (1 0 0) substrates. Whisker growth occurs on the layer surfaces under low V/III ratios and lo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::444b0c74efa7f5fa48ee635c3eb747d4
https://doi.org/10.1016/j.jcrysgro.2003.11.064
https://doi.org/10.1016/j.jcrysgro.2003.11.064
Autor:
Klaus Pierz, Wolfgang Stolz, Franz J. Ahlers, Ernst O. Göbel, T. Torunski, L. Gottwaldt, S. Nau
Publikováno v:
Journal of Applied Physics. 94:2464-2472
We have investigated the influence of interface roughness in GaAs/AlGaAs heterostructures on both the optical and the electronic properties by systematically varying the two growth parameters substrate temperature and growth interruption. We prove th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dc5a0321f16955aaef1e3b6539be7272
https://doi.org/10.1063/1.1588360
https://doi.org/10.1063/1.1588360
Autor:
T. Torunski, Ernst O. Göbel, Wolfgang Stolz, Franz J. Ahlers, S. Nau, Klaus Pierz, L. Gottwaldt
Publikováno v:
Journal of Crystal Growth. 251:85-89
We report the results of systematic studies of the influence of the growth temperature on the morphology of GaAs/(Al 0.3 Ga 0.7 )As quantum well interfaces. A combination of highly selective etching and subsequent atomic force microscopy measurements
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8f1f6dd4853bc0050e5480f2a17f4f56
https://doi.org/10.1016/s0022-0248(02)02399-0
https://doi.org/10.1016/s0022-0248(02)02399-0
Autor:
Wolfgang Stolz, W. Treutmann, Kerstin Volz, K. Megges, S. Nau, T. Torunski, Jörg Lorberth, M. Lampalzer
Publikováno v:
Journal of Crystal Growth. 248:474-478
We present the results of the epitaxial overgrowth of magnetic (MnGa)As-cluster structures with GaAs, (AlGa)As and AlAs using metal organic vapor phase epitaxy (MOVPE). The structural differences in the overgrowth are investigated by means of atomic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0b31b4c928f77f4ca2f47c1e3db9207d
https://doi.org/10.1016/s0022-0248(02)01920-6
https://doi.org/10.1016/s0022-0248(02)01920-6
Publikováno v:
Applied Physics Letters. 85:5908-5910
By calculations in the framework of the valence force field method, we show that nitrogen atoms in diluted GaAs1−xNx tend to align along the [001] direction. In quaternary alloys Ga1−yInyAs1−xNx this tendency is observed only in “as-grown”
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fc8bc99d77609e4235ad996543d01ce9
https://doi.org/10.1063/1.1829801
https://doi.org/10.1063/1.1829801
Autor:
Wolfgang Stolz, K. Hantke, J. Koch, T. Torunski, S. Reinhard, S. Borck, W. W. Rühle, Joerg Heber, Kerstin Volz, Bernardette Kunert
Publikováno v:
63rd Device Research Conference Digest, 2005. DRC '05..
Realizing monolithic optoelectronic integrated circuits (OIECs) on silicon substrate would open up an exciting and completely new field of applications, i.e. optical interconnects at the chip level. In the past a lot of effort has been devoted to the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8f75fcba775e7b172dbc48e0d91d08e3
https://doi.org/10.1109/drc.2005.1553157
https://doi.org/10.1109/drc.2005.1553157