Zobrazeno 1 - 10
of 321
pro vyhledávání: '"T. Tanbun-Ek"'
Publikováno v:
2022 28th International Semiconductor Laser Conference (ISLC).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f60ea1ae07cfd2dd94e5ff2feaab4240
https://doi.org/10.23919/islc52947.2022.9943502
https://doi.org/10.23919/islc52947.2022.9943502
Autor:
Douglas W. Anthon, David Schleuning, B. Acklin, Heiko Winhold, T. Tanbun-Ek, Sami Lehkonen, Athanasios Chryssis, Geunmin Ryu, L. Fan, Guoli Liu, Zuntu Xu
Publikováno v:
SPIE Proceedings.
A novel, 9XX nm fiber-coupled module using arrays of highly reliable laser diode bars has been developed. The module is capable of multi-kW output power in a beam parameter product of 80 mm-mrad. The module incorporates a hard-soldered, isolated stac
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2d13a84e7e4515fb8cc48fd19cb7b118
https://doi.org/10.1117/12.2208303
https://doi.org/10.1117/12.2208303
Autor:
B. Acklin, David Schleuning, F. Zhou, Zuntu Xu, T. Tanbun-Ek, Michael H. Peters, R. Pathak, Heiko Winhold
Publikováno v:
SPIE Proceedings.
We report on our progress developing long wavelength high power laser diodes based on the InGaAsP/InP alloy system emitting in the range from 1400 to 2010 nm. Output power levels exceeding 50 Watts CW and 40% conversion efficiency were obtained at 14
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::43c7b0f6d894db23697b24fb5eaa2a80
https://doi.org/10.1117/12.2209723
https://doi.org/10.1117/12.2209723
Publikováno v:
SPIE Proceedings.
We report on the performance of our high power and high efficiency 14xx nm lasers in different formats as packaged on conduction cooled packages using soft solder. Single emitters exhibited output powers as high as 6 watts, while six emitter minibars
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dbff16cd5b8331bdebe0eefa2bf478d3
https://doi.org/10.1117/12.2037978
https://doi.org/10.1117/12.2037978
Autor:
Zhijun Liu, Liwei Cheng, Scott S. Howard, Claire F. Gmachl, Anthony J. Hoffman, Daniel Wasserman, T. Tanbun-Ek, Fow-Sen Choa, Xiaojun Wang
Publikováno v:
IEEE Photonics Technology Letters. 18:1347-1349
We report on room-temperature continuous-wave (CW) operation of lambda~8.2 mum quantum cascade lasers grown by metal-organic chemical vapor deposition without lateral regrowth. The lasers have been processed as double-channel ridge waveguides with th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::388de005b10b19df3e443aa191629b31
https://doi.org/10.1109/lpt.2006.877006
https://doi.org/10.1109/lpt.2006.877006
Publikováno v:
IEEE Journal of Selected Topics in Quantum Electronics. 1:1100-1107
Amplified spontaneous emission spectroscopy is used to extract the gain and refractive index spectra systematically. We obtain the gain and differential gain spectra using the Hakki-Paoli method. The refractive index profile, the induced change in re
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b15d323ccce78d8d0248634150496590
https://doi.org/10.1109/2944.488687
https://doi.org/10.1109/2944.488687
Publikováno v:
Journal of Applied Physics. 73:4444-4447
A simple fitting technique based on the current balancing concept has been used to calculate the minority‐carrier diffusion length Ln in the base layer of an InP/InGaAs single‐heterojunction bipolar transistor grown by metalorganic chemical‐vap
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::747af8fc5ca9357773917da0cad89fda
https://doi.org/10.1063/1.354070
https://doi.org/10.1063/1.354070
Publikováno v:
Journal of Applied Physics. 72:4118-4124
We report on a systematic study of atomic ordering in InGaAsP and InGaAs grown by atmospheric pressure metalorganic chemical vapor deposition. InGaAsP lattice matched to InP, grown in a temperature range of 625–650 °C, reveals atomic ordering on t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7bbefb0d8ac7094cf57e9fb01fa80c63
https://doi.org/10.1063/1.352218
https://doi.org/10.1063/1.352218
Publikováno v:
IEEE Photonics Technology Letters. 3:688-693
The authors demonstrate theoretically and experimentally that the relative intensity noise (RIN) of laser diodes can be dramatically reduced by decreasing nonlinear damping in the laser. Four types of InGaAs/InP multiple quantum well (MQW) lasers wit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::58d7eea2b3b38bc2c78cb64299f25a5a
https://doi.org/10.1109/68.84454
https://doi.org/10.1109/68.84454
Autor:
Henryk Temkin, N.A. Olsson, Ralph A. Logan, Steven Chu, K.W. Wecht, A.M. Sergent, T. Tanbun-Ek
Publikováno v:
IEEE Journal of Quantum Electronics. 26:1323-1327
A report is presented on the growth and characterization of the first InGaAs-InP-based graded-index separate-confinement-heterostructure (GRIN-SCH) strained quantum-well lasers operating near 1.47 mu m. The structure features linearly graded InGaAsP
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::97ef36ab0d34945180b9a3c41ad9c0e4
https://doi.org/10.1109/3.59676
https://doi.org/10.1109/3.59676