Zobrazeno 1 - 4
of 4
pro vyhledávání: '"T. T. Trang Nghiem"'
Publikováno v:
Modern Physics Letters B. 25:995-1001
We present a study of the giant piezoresistance effect in p-type silicon using full-band Monte Carlo simulation based on 30-band k.p calculation. This effect has been demonstrated experimentally in Si nanowires by He and Yang. By including the well-k
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1c805bcc608cf86cd4dcd6f6de74be79
https://doi.org/10.1142/s0217984911026711
https://doi.org/10.1142/s0217984911026711
Autor:
Karim Huet, V. Aubry-Fortuna, Philippe Dollfus, T. T. Trang Nghiem, Arnaud Bournel, Jérôme Saint-Martin
Publikováno v:
Applications of Monte Carlo Methods in Biology, Medicine and Other Fields of Science
The particle-based Monte Carlo (MC) technique is acknowledged as a powerful method for accurately describing the carrier transport in semiconductor materials and devices within the semi-classical approximation, i.e. the Boltzmann transport equation (
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4059764c3496c763ac14117d32ec0c57
https://doi.org/10.5772/15524
https://doi.org/10.5772/15524
Publikováno v:
2010 International Conference on Simulation of Semiconductor Processes and Devices.
This article presents a study of the giant piezoresistance effect in p-type silicon using full-band Monte Carlo simulation. This effect has been demonstrated experimentally in Si nanowires by He and Yang [1]. By introducing a law of variation of the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5fa6fa509b1d32aa2ccc6ac16aa423a3
https://doi.org/10.1109/sispad.2010.5604493
https://doi.org/10.1109/sispad.2010.5604493
Publikováno v:
2016 MIXDES - 23rd International Conference Mixed Design of Integrated Circuits & Systems; 2016, p32-37, 6p