Zobrazeno 1 - 10
of 15
pro vyhledávání: '"T. T. MNATSAKANOV"'
Publikováno v:
Semiconductors. 55:S22-S29
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::22a34f1fad131d87ec6a3cc40bbad73d
https://doi.org/10.1134/s1063782621060142
https://doi.org/10.1134/s1063782621060142
Publikováno v:
Technical Physics. 63:1497-1503
On the basis of numerical simulation, specificities of the effect of dU/dt in 4H–SiC thyristor structures, related to realization of the recently discovered triggering α-mechanism are analyzed. It is shown that one of the manifestations of this me
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::60a6278d922451c9f2ebcf9d8dc29f88
https://doi.org/10.1134/s1063784218100250
https://doi.org/10.1134/s1063784218100250
Publikováno v:
Semiconductors. 42:220-227
An analytical model that accounts for the effect of Auger recombination on the position of inversion points in the current-voltage characteristics of high-voltage semiconductor diodes is suggested. It is shown that Auger recombination not only shifts
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::22e42e8d3760fefb3bfc772158f055c5
https://doi.org/10.1134/s106378260802019x
https://doi.org/10.1134/s106378260802019x
Publikováno v:
Technical Physics. 51:609-614
The basic stages of switching a high-power integrated thyristor controlled by an external MOSFET are analyzed qualitatively and quantitatively. The stage of switching delay is analyzed in terms of an analytical model the adequacy of which is verified
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::03ab9bb785961935609c87c408663d3d
https://doi.org/10.1134/s1063784206050112
https://doi.org/10.1134/s1063784206050112
Publikováno v:
International Journal of High Speed Electronics and Systems. 15:931-996
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1b2ade5f7496b5846e2a726e503a0b5a
https://doi.org/10.1142/s0129156405003466
https://doi.org/10.1142/s0129156405003466
Publikováno v:
Technical Physics. 50:896-903
A theoretical analysis of physical processes in an MOS-controlled high-power integrated thyristor is presented. The design of this device and the effect of diffusion layer parameters on the I–V characteristic in the on state are considered. A rigor
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::546ef95063c6be4d3e6e90bfd192c208
https://doi.org/10.1134/1.1994971
https://doi.org/10.1134/1.1994971
Publikováno v:
Semiconductors. 37:1123-1126
The influence of various factors controlling the recovery dynamics of the blocking property of silicon carbide diodes is comparatively analyzed. It is shown that the mechanism related to the large ratio of electron and hole mobilities in SiC is domin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::da86a6b19381f2b4027393cc92b07624
https://doi.org/10.1134/1.1610132
https://doi.org/10.1134/1.1610132
Autor:
I. F. Voloshin, A. A. Levchenko, A. V. Kalinov, T. T. Mnatsakanov, V. A. Yampol'skii, L. M. Fisher
Publikováno v:
Applied Physics Letters. 84:553-555
A simple method is proposed for defining the parameters of current–voltage characteristics (CVCs) of hard superconductors, which is based on measuring the relaxation of magnetization. In this method, the inhomogeneity of the spatial distribution of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::40219abae57a042ff1e8b04b93fe7066
https://doi.org/10.1063/1.1642759
https://doi.org/10.1063/1.1642759
Publikováno v:
Sic Materials and Devices ISBN: 9789812568359
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7609a514d1c3ca31e173be65622ea14f
https://doi.org/10.1142/9789812773371_0007
https://doi.org/10.1142/9789812773371_0007
Publikováno v:
Semiconductor Science & Technology; Aug2005, Vol. 20 Issue 8, p793-795, 3p