Zobrazeno 1 - 10
of 611
pro vyhledávání: '"T. Suski"'
Publikováno v:
AIP Advances, Vol 14, Iss 4, Pp 040704-040704-15 (2024)
This Review provides a thorough description of the experimental progress on the InN family and other relevant compounds. Although InN is of great interest, many of its properties are not well understood and are still puzzling researchers with a numbe
Externí odkaz:
https://doaj.org/article/3ff32d4852ba4f7683e15bcfd6c9b239
Publikováno v:
Optics Express. 31:3227
Wide (15-25 nm) InGaN/GaN quantum wells in LED structures were studied by time-resolved photoluminescence (PL) spectroscopy and compared with narrow (2.6 nm) wells in similar LED structures. Using below-barrier pulsed excitation in the microsecond ra
Autor:
John Macarthur, Jack Thomas, Loyd McKnight, Shaun Jones, William Dorward, Stephen P. Najda, Piotr Perlin, T. Suski, Szymon Stanczyk, M. Leszczynski, Dario Schiavon
Publikováno v:
Quantum Sensing and Nano Electronics and Photonics XVIII.
Autor:
S.P. Najda, P. Perlin, T. Suski, S. Stanczyk, A. Kafar, M. Leszczyński, D. Schiavon, T. Slight, S. Gwyn, S. Watson, A.E. Kelly, J. Macarthur, L. McKnight, M. Knapp, M. Haji
Publikováno v:
Quantum 2.0 Conference and Exhibition.
We report on GaN lasers with extremely narrow linewidth (~1MHz) at ‘magic wavelengths’ for cold-atom quantum sensors and optical atomic clocks, using extended cavity GaN laser diodes and DFB GaN laser diodes.
Autor:
I. Gorczyca, G. Staszczak, G. Targowski, E. Grzanka, J. Smalc-Koziorowska, K. Skrobas, T. Suski
Publikováno v:
Micro and Nanostructures. 169:207327
Akademický článek
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Autor:
M. Leszczyński, John Macarthur, Thomas J. Slight, T. Suski, Szymon Stanczyk, Steffan Gwyn, Scott Watson, Martin Knapp, Antony E. Kelly, S. Schiavon, S. P. Najda, P. Perlin, Mohsin Haji, Loyd McKnight
Publikováno v:
OSA Optical Sensors and Sensing Congress 2021 (AIS, FTS, HISE, SENSORS, ES).
We report on GaN lasers with extremely narrow linewidth (~1MHz) at ‘magic wavelengths’ for cold-atom quantum sensors and optical atomic clocks, using extended cavity GaN laser diodes and DFB GaN laser diodes.
Autor:
A. Kafar, A. Sakaki, R. Ishii, K. Shojiki, S. Stanczyk, K. Gibasiewicz, G. Staszczak, L. Marona, D. Schiavon, S. Grzanka, S. Krukowski, T. Suski, P. Perlin, M. Funato, Y. Kawakami
Publikováno v:
Optical Materials Express. 12:119
Within this work, we studied InGaN QWs with nominally 17% InN mole fraction grown within an 80 × 80 μm area with local misorientation angle change from 0.3° to 3.2°. We observed a significant improvement of the photoluminescence intensity for the
Akademický článek
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Autor:
M. Leszczynski, D. Schiavon, R. Czernecki, P. Wisniewski, S. Stanczyk, L. Marona, T. Suski, P. Perlin, Stephen P. Najda
Publikováno v:
Gallium Nitride Materials and Devices XIII.