Zobrazeno 1 - 10
of 243
pro vyhledávání: '"T. Straubinger"'
Autor:
Klaus Irmscher, T. Straubinger, L. Matiwe, Jürgen Wollweber, Carsten Hartmann, Matthias Bickermann, Ivan Gamov
Publikováno v:
CrystEngComm. 22:1762-1768
We report on the growth and characterization of bulk AlN crystals prepared using five different growth conditions (seed temperatures and temperature differences between source and seed) in an otherwise identical growth setup. The experimentally deter
Autor:
Sebastian Walde, Tim Wernicke, Norman Susilo, Eviathar Ziffer, Markus Weyers, L. Matiwe, T. Straubinger, Pierre-Marie Coulon, Carsten Hartmann, Carol Trager-Cowan, Jonas Weinrich, Philip A. Shields, Anna Mogilatenko, A. Alasmari, Carsten Netzel, Gunnar Kusch, Robert W. Martin, Sylvia Hagedorn, Michael Kneissl, M. Bickermann, G. Naresh-Kumar
Publikováno v:
Walde, S, Hagedorn, S, Coulon, P, Mogilatenko, A, Netzel, C, Weinrich, J, Susilo, N, Ziffer, E, Matiwe, L, Hartmann, C, Kusch, G, Alasmari, A, Naresh-kumar, G, Trager-cowan, C, Wernicke, T, Straubinger, T, Bickermann, M, Martin, R W, Shields, P A, Kneissl, M & Weyers, M 2020, ' AlN overgrowth of nano-pillar-patterned sapphire with different offcut angle by metalorganic vapor phase epitaxy ', Journal of Crystal Growth, vol. 531, 125343 . https://doi.org/10.1016/j.jcrysgro.2019.125343
We present overgrowth of nano-patterned sapphire with different offcut angles by metalorganic vapor phase epitaxy. Hexagonal arrays of nano-pillars were prepared via Displacement Talbot Lithography and dry-etching. 6.6 µm crack-free and fully coales
Autor:
Andrea Dittmar, Jürgen Wollweber, Carsten Hartmann, Iurii Kogut, Ivan Gamov, T. Straubinger, Holger Fritze, Klaus Irmscher, Matthias Bickermann
Publikováno v:
Journal of Applied Physics. 126:215102
AlN bulk single crystals grown by the physical vapor transport method may be beneficially applied as substrates for deep ultraviolet light emitting devices or as a basic material for piezoelectric resonators operating at high temperatures. Identifica
Autor:
Yuriy Suhak, Klaus Irmscher, Jürgen Wollweber, Carsten Hartmann, Andrea Dittmar, Holger Fritze, Ivan Gamov, Michal Schulz, Sebastian Schröder, Iurii Kogut, Matthias Bickermann, T. Straubinger
Publikováno v:
Solid State Ionics. 343:115072
Bulk single-crystalline aluminum nitride (AlN) is potentially a key component for low-loss high-temperature piezoelectric devices. However, the incorporation of electrically active impurities and defects during growth of AlN may adversely affect the
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Akademický článek
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Publikováno v:
Journal of Crystal Growth. 360:193-196
Bulk AlN single crystals (3 mm thick and 1 in. diameter) were hetero-epitaxially grown on (0001) 6H–SiC substrates by the sublimation method. Double-crystal x-ray diffraction and micro-Raman results confirm the good crystallinity as well as structu
Publikováno v:
physica status solidi (a). 209:415-418
Aluminium nitride (AlN) bulk single crystals were grown on off-oriented4H-SiC substrates by the sublimation method. High-quality crystals withabout 25 mm in diameter and up to 5 mm in thickness were obtained withan optimized growth process. The cryst
Publikováno v:
physica status solidi c. 8:2107-2109
AlN single crystals with 25 mm diameter and 3 mm thickness were grown on on-axis, Si-terminated, (001) 6H-SiC substrates with a growth rate of 20-25 μm/h by the sublimation method. The growth conditions were optimised and the grown crystals exhibit
Publikováno v:
Journal of the European Ceramic Society. 21:2521-2533
A model system, composed of powder blends of amorphous isomorphic silica spheres, being 500 nm in diameter, and also monosized crystalline α-Al 2 O 3 powder, was investigated. Two different particle sizes of the corresponding alumina powder were emp