Zobrazeno 1 - 10
of 63
pro vyhledávání: '"T. Souier"'
Publikováno v:
Journal of Materials Science: Materials in Electronics. 33:5707-5719
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::93844c31c70e082754c389b28c2ba3f7
https://doi.org/10.1007/s10854-022-07757-1
https://doi.org/10.1007/s10854-022-07757-1
Publikováno v:
Journal of Materials Science: Materials in Electronics. 24:3081-3088
Molybdenum (Mo)-doped In2O3 thin film with 10 wt% was successfully prepared by evaporation method. After annealing at 600 °C the film changes it colour from very dark to a clear transparent film. SEM and AFM analysis reveal that the film is continuo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ad432181f635428eb815b8d69ed508d9
https://doi.org/10.1007/s10854-013-1214-2
https://doi.org/10.1007/s10854-013-1214-2
Publikováno v:
Thin Solid Films. 520:656-661
The mechanism of electron transport in ultra-thin gold films is investigated and its dependence on the gold islands size is reported. For gold films of thickness below 38 nm, the electrical transport occurs by tunneling within electrically discontinu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bb6fe2194d8b67f3724a16130f713d99
https://doi.org/10.1016/j.tsf.2011.08.069
https://doi.org/10.1016/j.tsf.2011.08.069
Publikováno v:
Materials Science and Engineering: B. 176:840-845
Structure and local lateral electrical properties of Au films of thicknesses ranging from 10 to 140 nm are studied using conductive atomic force microscopy. Comparison of current maps taken at different thicknesses reveals surprising highly resistive
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9860c2d84314df8a39ca22fe5e94b58e
https://doi.org/10.1016/j.mseb.2011.04.013
https://doi.org/10.1016/j.mseb.2011.04.013
Publikováno v:
DTIS
One of the key deliverables of using graphene as a channel in transistors is to achieve low source and drain parasitic contact resistance. Careful characterization of the surface of graphene is needed in order to improve understanding of the metal to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1cbb75ddd521e660b75cb2b63aa5ab24
https://doi.org/10.1109/dtis.2013.6527806
https://doi.org/10.1109/dtis.2013.6527806
Publikováno v:
Nanotechnology. 23(6)
Research on thermoelectric (TE) materials has been focused on their transport properties in order to maximize their overall performance. Mechanical properties, which are crucial for system reliability, are often overlooked. The recent development of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d04193590adc39bd4e19105edfe99bd3
https://pubmed.ncbi.nlm.nih.gov/22248623
https://pubmed.ncbi.nlm.nih.gov/22248623
Publikováno v:
Digital.CSIC. Repositorio Institucional del CSIC
instname
instname
Measuring the level of hydrophilicity of heterogeneous surfaces and the true height of water layers that form on them in hydrated conditions has a myriad of applications in a wide range of scientific and technological fields. Here, we describe a true
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::03be40d9943eca72512bfe44986e8d80
http://hdl.handle.net/10261/51044
http://hdl.handle.net/10261/51044
Akademický článek
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Akademický článek
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Autor:
Nazek El-Atab, Matteo Chiesa, Samar Alqatari, T. Souier, Ali Kemal Okyay, Feyza B. Oruc, Ammar Nayfeh
Publikováno v:
AIP Advances, Vol 3, Iss 10, Pp 102119-102119-7 (2013)
AIP Advances
AIP Advances
Cataloged from PDF version of article. A thin-film ZnO(n)/Si(p+) heterojunction diode is demonstrated. The thin film ZnO layer is deposited by Atomic Layer Deposition (ALD) at different temperatures on a p-type silicon substrate. Atomic force microsc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d02f709f03efeefc875cdf9e0914897b
https://doaj.org/article/30f75175af8d463791e842db317288c3
https://doaj.org/article/30f75175af8d463791e842db317288c3