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Publikováno v:
Journal of Crystal Growth. 222:719-725
Accurate measurements of the lattice constant of cadmium mercury telluride (Cd x Hg 1− x Te, or CMT) grown by molecular beam epitaxy (MBE) are reported for the composition range 0⩽ x
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b0708c596c007af0b23a88544ee123a8
https://doi.org/10.1016/s0022-0248(00)01005-8
https://doi.org/10.1016/s0022-0248(00)01005-8
Publikováno v:
Journal of Electronic Materials. 29:687-690
Uniform layers of cadmium mercury telluride have been grown on inhomogeneous cadmium zinc telluride substrates by molecular beam epitaxy so that a single epitaxial layer experiences a laterally varying lattice mismatch. The lateral variations of laye
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e4858b741d395b0dffb156b79abbc8a2
https://doi.org/10.1007/s11664-000-0206-1
https://doi.org/10.1007/s11664-000-0206-1
Publikováno v:
Journal of Crystal Growth. 197:427-434
Growth of epitaxial layers of Cd x Hg 1− x Te (CMT) onto Cd 1− y Zn y Te (CZT) substrates is widely reported as being performed in order to minimize misfit dislocations at the growth interface. The lattice parameters of CdZnTe alloys with y ∼0.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5c0504252c543d7e099be15eec70ce35
https://doi.org/10.1016/s0022-0248(98)00741-6
https://doi.org/10.1016/s0022-0248(98)00741-6
Publikováno v:
Journal of Materials Science: Materials in Electronics. 10:589-593
Epitaxial layers of CdxHg1−xTe (CMT) are grown onto Cd1−yZnyTe (CZT) substrates in order to minimize misfit dislocations at the growth interface. For long wavelength focal plane array infrared detector requirements x = 0.22 CMT is nominally latti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::16aa62ecdfb502400991f1b53e693849
https://doi.org/10.1023/a:1008989625156
https://doi.org/10.1023/a:1008989625156
Publikováno v:
Journal of Crystal Growth. :670-676
We have measured, by X-ray diffraction, the deformation of uniform cadmium mercury telluride layers epitaxially grown on cadmium zinc telluride substrates with varying zinc concentration. It is then possible, within the same sample, to clearly identi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::87315ca540c250bceac8eb1740a82d1a
https://doi.org/10.1016/s0022-0248(96)00986-4
https://doi.org/10.1016/s0022-0248(96)00986-4
Publikováno v:
Journal of Crystal Growth. 172:97-105
A simple procedure is described for mapping of lattice parameter and X-ray rocking curve width across Cd 1− y Zn y Te (CZT) substrates and Cd x Hg 1− x Te (CMT) epitaxial layers. It is shown how screening of the crystallinity and composition of C
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c4438e0d8a952515d1e2604f47954baf
https://doi.org/10.1016/s0022-0248(96)00732-4
https://doi.org/10.1016/s0022-0248(96)00732-4
Publikováno v:
Semiconductor Science and Technology. 11:1168-1172
Metal - oxide - semiconductor field-effect transistors (MOSFETs) on CdTe/HgTe/CdTe heterostructures are fabricated with silicon dioxide gate insulators. In these devices, the density of the quasi two-dimensional electron gas in the HgTe quantum well
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::053a554363885fe7f7acc24329ba9da4
https://doi.org/10.1088/0268-1242/11/8/009
https://doi.org/10.1088/0268-1242/11/8/009
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 12:274-277
The growth of cadmium mercury telluride (CMT) by molecular beam epitaxy requires control of the substrate temperature within a narrow window of a few degrees for growth of twin‐free layers on the (111)B and (211)B orientations. It is shown that a t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::824802ee95dcd8adb2185a73cb9b126f
https://doi.org/10.1116/1.578867
https://doi.org/10.1116/1.578867
Publikováno v:
Semiconductor Science and Technology. 8:S296-S299
The authors consider interband and intersubband absorption in HgCdTe/CdTe single quantum well structures. By measuring the transmission in an internal reflection geometry with and without a metallized surface and polarized light, they study the depen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::810818b3d9c2e0f307b1983d1ee65aa0
https://doi.org/10.1088/0268-1242/8/1s/065
https://doi.org/10.1088/0268-1242/8/1s/065