Zobrazeno 1 - 10
of 69
pro vyhledávání: '"T. Signamarcheix"'
Autor:
J.-R. Lequepeys, Thomas Ernst, Alexandre Valentian, S. Catrou, L. Herault, T. Signamarcheix, D. Louis, Elisa Vianello, R. Fournel, S. Bonnetier, F. Perruchot, C. Reita, A. Jerraya, M. Duranton
Publikováno v:
ESSCIRC
ESSCIRC 2021-IEEE 47th European Solid State Circuits Conference (ESSCIRC)
ESSCIRC 2021-IEEE 47th European Solid State Circuits Conference (ESSCIRC), Sep 2021, Grenoble, France. pp.7-14, ⟨10.1109/ESSCIRC53450.2021.9567836⟩
ESSCIRC 2021-IEEE 47th European Solid State Circuits Conference (ESSCIRC)
ESSCIRC 2021-IEEE 47th European Solid State Circuits Conference (ESSCIRC), Sep 2021, Grenoble, France. pp.7-14, ⟨10.1109/ESSCIRC53450.2021.9567836⟩
The complete ecosystem of electronic device manufacturers, from microelectronics, software and hardware designers to developers, producers, and integrators, is facing an immense new environmental challenge: to cope with the data deluge and to reduce
Autor:
S. Cristoloveanu, Young-Ho Bae, Laurent Clavelier, O. Faynot, T. Signamarcheix, A. Ohata, Bruno Ghyselen, Julie Widiez
Publikováno v:
Microelectronic Engineering. 88:1265-1268
The impact of local deep-amorphization (DA) and subsequent solid-phase epitaxial regrowth (SPER) are studied for the co-integration of devices with hybrid surface orientation. Thin-body p-channel transistors with 20nm thick film and HfO"2 gate insula
Autor:
B. Ghyselen, Emmanuel Nolot, Laurent Clavelier, O. Faynot, B. Biasse, T. Signamarcheix, Francois Andrieu, M. Casse, A.M. Papon
Publikováno v:
Solid-State Electronics
An alternative technology is studied here to elaborate hybrid orientation silicon on insulator (SOI) films above a continuous buried oxide (BOX). To this purpose, a “deep-amorphization” followed by solid phase epitaxial regrowth (SPER) of SOI fil
Autor:
Mickael Martin, Ludovic Ecarnot, Pascal Besson, Daniel Delprat, M. C. Roure, Christelle Veytizou, A. Salaun, Christophe Morales, Thierry Baron, E. Beche, Frank Fournel, M. Cordeau, Patrice Gergaud, T. Signamarcheix, Iuliana Radu, Frédéric Mazen, Sylvie Favier, Julie Widiez, Gweltaz Gaudin, S. Sollier
Publikováno v:
2015 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S).
In this work we demonstrate for the first time 300 mm InGaAs on Insulator (InGaAs-OI) substrates. A 30 nm thick InGaAs layer was successfully transferred using low temperature Direct Wafer Bonding (DWB) and the Smart CutTM technology. The epitaxial g
Autor:
M. Martin, E. Beche, C. Veytizou, S. Sollier, G. Gaudin, S. Arnaud, S. David, D. Delprat, A. Salaun, T. Baron, T. Signamarcheix, J. Widiez, Frederic Mazen, F. Madeira, Sylvie Favier, Helen Grampeix
Publikováno v:
Extended Abstracts of the 2015 International Conference on Solid State Devices and Materials.
Publikováno v:
2015 Joint IEEE International Symposium on the Applications of Ferroelectric (ISAF), International Symposium on Integrated Functionalities (ISIF), and Piezoelectric Force Microscopy Workshop (PFM).
SAW devices are widely used for radio-frequency (RF) telecommunication filtering and the number of SAW filters, resonators or duplexers is still increasing in RF stage of cellular phones. Therefore, a strong effort is still dedicated to reduce as muc
Publikováno v:
Physics Procedia
Physics Procedia, 2015, 70, pp.1007-1011
Physics Procedia, 2015, 2015 ICU International Congress on Ultrasonics May 2015 Metz, 70, pp.1007-1011. ⟨10.1016/j.phpro.2015.08.210⟩
Physics Procedia, 2015, 70, pp.1007-1011
Physics Procedia, 2015, 2015 ICU International Congress on Ultrasonics May 2015 Metz, 70, pp.1007-1011. ⟨10.1016/j.phpro.2015.08.210⟩
International audience; SAW devices are widely used for radio-frequency (RF) telecommunication filtering and the number of SAW filters, resonators or duplexers is still increasing in RF stage of cellular phones. Therefore, a strong effort is still de
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::509caee3c8ba2ba37c30b7b23449226f
https://hal.archives-ouvertes.fr/hal-02993743
https://hal.archives-ouvertes.fr/hal-02993743
Autor:
P. Lavenus, Sebastien Grousset, B. Bourgeteau, Lamine Benaissa, T. Signamarcheix, Olivier Le Traon, Denis Janiaud, Raphaël Lévy
Publikováno v:
2014 European Frequency and Time Forum (EFTF).
A three-dimensional length-extension mode (3D-LEM) resonator has been developed for fundamental physics purpose showing a very good frequency stability potential highlighted by a Quality factor Frequency product (Q.F) above 1013. Those characteristic
Autor:
P. Lavenus, T. Signamarcheix, Rachid Taibi, Sylvain Ballandras, Lamine Benaissa, Emmanuel Augendre, Olivier Le Traon, Sebastien Grousset
Publikováno v:
2014 IEEE International Frequency Control Symposium (FCS).
Here we present the results of a wafer-level approach allowing the collective fabrication of gyroscope sensors based on quartz vibrating MEMS. More specifically, we focus on suspended quartz tuning fork microstructures of a desired thickness over con
Autor:
Sylvain Ballandras, T. Signamarcheix, Lamine Benaissa, Emilie Courjon, Thomas Baron, Emmanuel Augendre, Sebastien Grousset
Publikováno v:
2013 Joint European Frequency and Time Forum & International Frequency Control Symposium (EFTF/IFC).
In this paper, we present a wafer level approach to fabricate SAW pressure sensors on a single crystal AT-cut Quartz film transferred onto a bulk Silicon substrate. The final thickness of the quartz active layer was obtained using a combination of co