Zobrazeno 1 - 10
of 36
pro vyhledávání: '"T. Shivan"'
Autor:
M. Hossain, T. Shivan, R. Doerner, S. Seifert, H. Yacoub, T. K. Johansen, W. Heinrich, V. Krozer
Publikováno v:
2021 16th European Microwave Integrated Circuits Conference (EuMIC).
Publikováno v:
2021 IEEE MTT-S International Microwave Symposium (IMS).
A fundamental frequency up-converter for ultra-capacity wireless applications with high conversion gain is presented, realized as double-balanced Gilbert cell mixer using an 800 nm transferred substrate (TS) InP-DHBT technology. The local oscillator
Publikováno v:
2020 50th European Microwave Conference (EuMC), 199-202
STARTPAGE=199;ENDPAGE=202;TITLE=2020 50th European Microwave Conference (EuMC)
STARTPAGE=199;ENDPAGE=202;TITLE=2020 50th European Microwave Conference (EuMC)
This paper presents an analysis on the bandwidth and group delay variation of the artificial transmission line structures that are inherent to distributed amplifiers. An Indium-Phosphide (InP) distributed amplifier consisting of four buffered cascode
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::dc8e41aa9c4f4d2c274cc659131675e2
https://doi.org/10.23919/eumc48046.2021.9337955
https://doi.org/10.23919/eumc48046.2021.9337955
Autor:
Viktor Krozer, T. Shivan, Ralf Doerner, Ksenia Nosaeva, Maruf Hossain, Tom K. Johansen, Hady Yacoub, Wolfgang Heinrich
Publikováno v:
2020 IEEE/MTT-S International Microwave Symposium (IMS).
This work presents an SPDT switch with more than 235 GHz bandwidth, fabricated using 800 nm InP DHBT technology. Three cascaded shunt stages were used to achieve high isolation and relatively large transistors within the 90–325 GHz operating range.
Autor:
D. Stoppel, T. Shivan, Nils Weimann, Viktor Krozer, Colombo R. Bolognesi, Ralf Doerner, Wolfgang Heinrich, Sebastian Boppel, Maruf Hossain, Olivier Ostinelli
Publikováno v:
IEEE Microwave and Wireless Components Letters. 28:1029-1031
This letter presents a 1 to >110-GHz ultrawideband traveling-wave amplifier (TWA) based on 500-nm transferred-substrate InP double-heterojunction bipolar transistor technology. The HBT cells are realized with inductive peaking at the output and match
Autor:
Wolfgang Heinrich, Sebastian Boppel, S. Schulz, Ralf Doerner, Tom K. Johansen, Viktor Krozer, Maruf Hossain, T. Shivan
Publikováno v:
Technical University of Denmark Orbit
Scopus-Elsevier
Scopus-Elsevier
This work reports a highly linear and efficient ultra-wideband distributed amplifier in 500 nm transferred-substrate InP DHBT technology. Five unit cells each with a tri-code transistor set provide the ultra-wideband properties of this amplifier. A t
Autor:
Tom K. Johansen, Hady Yacoub, Viktor Krozer, T. Shivan, Maruf Hossain, Wolfgang Heinrich, Sebastian Boppel, Ralf Doerner
Publikováno v:
Shivan, T, Hossain, M, Doerner, R, Johansen, T K, Yacoub, H, Boppel, S, Heinrich, W & Krozer, V 2019, ' Performance Analysis of a Low-Noise, Highly Linear Distributed Amplifier in 500-nm InP/InGaAs DHBT Technology ', I E E E Transactions on Microwave Theory and Techniques, vol. 67, no. 12, pp. 5139-5147 . https://doi.org/10.1109/TMTT.2019.2947664
This article is an extension of the previous report on an ultrawideband distributed amplifier (DA) in the InP double heterojunction bipolar transistor (DHBT) technology. With the choice of a tricode unit cell, the Miller capacitance is reduced and a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d9b873257803e876c217576cf54afc70
https://orbit.dtu.dk/en/publications/cacdd4c5-f3e8-40bb-b158-12206b33866b
https://orbit.dtu.dk/en/publications/cacdd4c5-f3e8-40bb-b158-12206b33866b
Autor:
Wolfgang Heinrich, Nils Weimann, Colombo R. Bolognesi, Tom K. Johansen, Viktor Krozer, Olivier Ostinelli, Maruf Hossain, S. Schulz, T. Shivan, D. Stoppel, Ralf Doerner
Publikováno v:
2018 11th German Microwave Conference (GeMiC).
This paper presents a DC-95 GHz distributed amplifier (DA) based on an InP/GaAsSb/InP 800 nm DHBT technology. The circuit employs five cascode unit cells with 0.8 µm × 6 µm HBTs. To obtain flat small-signal gain and group delay characteristics, in
Autor:
D. Stoppel, Viktor Krozer, Nils Weimann, T. Shivan, W. Heinrich, Sebastian Boppel, Ralf Doerner, Maruf Hossain
A broadband single-pole-double-throw (SPDT) switch is presented covering 220–325 GHz in 800 nm transferred substrate InP DHBT technology. The SPDT switch configuration employs shunt-topology. The circuit achieves an isolation of >36 dB within the b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3e2280ab450a2385a7d0614af3bb80db
https://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&origin=inward&scp=85054927970
https://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&origin=inward&scp=85054927970
Autor:
Megha Murali, T. Shivanandappa
Publikováno v:
Ecotoxicology and Environmental Safety, Vol 239, Iss , Pp 113593- (2022)
Endosulfan, a neurotoxic, highly persistent organochlorine insecticide, is known for its acute and chronic toxicity. We have shown that a single sublethal dose of endosulfan caused high induction of oxidative stress in the liver and brain by altering
Externí odkaz:
https://doaj.org/article/94f19d6aded648dfae836ba52ba7641b