Zobrazeno 1 - 10
of 37
pro vyhledávání: '"T. Schmidtling"'
The pair distribution function of nitrogen atoms in GaAs0.983N0.017 has been determined by scanning tunneling microscopy. Nitrogen atoms in the first and third planes relative to the cleaved (110) surface are imaged. A modest enhancement in the numbe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1bd80675c4835434039f8ec0098add12
Autor:
Jean-Louis Doualan, W. Richter, Florence Gloux, M. Abouzaid, M. Drago, U. W. Pohl, T. Schmidtling, P. Ruterana, W. Maciej
Publikováno v:
physica status solidi (a). 203:158-161
In this work we investigate the microstructure of InN layers grown by MOCVD on different buffer layers using TEM (InN, GaN). The large mismatch between the various lattices (InN, sapphire or GaN) leads to particular interface structures. Our local an
Publikováno v:
Journal of Crystal Growth. 272:87-93
The thermal stability of InN in various ambients was investigated using in-situ spectroscopic ellipsometry. Improvement of the structural quality was found for annealing in nitrogen atmosphere in a narrow temperature window between 520 and 550 °C. A
Publikováno v:
Journal of Crystal Growth. 269:106-110
Indium nitride epilayers grown by metalorganic vapor-phase epitaxy have been studied by cathodoluminescence (CL) spectroscopy, scanning tunneling microscopy and scanning tunneling spectroscopy (STS). A broad CL emission peak centered at 0.8eV was obs
Publikováno v:
physica status solidi (c). :2949-2955
Through the implementation of a Raman spectroscopic equipment into a metalorganic vapor phase epitaxy setup (MOVPE) via optical fibers we determine surface and bulk related properties of III–V semiconductors in a temperature range up to 1200 K. Sur
Autor:
M. Drago, Norbert Esser, Randall M. Feenstra, T. Schmidtling, C. Cobet, N. Wollschläger, Wolfgang Richter
Publikováno v:
physica status solidi (c). :2938-2943
Spectroscopic ellipsometry (SE) is used to determine GaN surface termination during growth with metal-organic vapor phase epitaxy (MOVPE) by a correlation to well known results of plasma-assisted molecular beam epitaxy (PAMBE). The results manifest t
Publikováno v:
physica status solidi (c). :2842-2845
The morphology of InN layers grown directly on sapphire is strongly affected by the large lattice mismatch; epitaxial layers exceeding a thickness of 150 nm were found to partially bulge and peel off, regardless of different growth parameters. In-sit
Publikováno v:
Journal of Crystal Growth. 248:523-527
Metalorganic vapor phase epitaxy of indium nitride (InN) on sapphire was studied and optimized in situ by spectroscopic ellipsometry. Layers with smooth surface morphology were obtained on low-temperature nucleation layers on nitrided sapphire substr
Publikováno v:
Microelectronics Journal. 30:449-453
We have performed growth and surface studies using atomic force microscopy (AFM), reflectance anisotropy spectroscopy (RAS), and low energy electron diffraction (LEED) on GaAs (113), (115), (001), ( 1 1 5 ) , ( 1 1 3 ) , and (110) surfaces in metal-o
Autor:
Jörg-Th. Zettler, T. Wehnert, Markus Pristovsek, Jutta Platen, Housni Menhal, Carsten Setzer, Karl Jacobi, T. Schmidtling, Wolfgang Richter, Norbert Esser
Publikováno v:
Journal of Crystal Growth. 195:1-5
We investigated GaAs (1 1 3) surfaces prepared by molecular beam epitaxy (MBE) and metal-organic vapour phase epitaxy (MOVPE) with reflectance anisotropy spectroscopy (RAS) and low energy electron diffraction (LEED) and found two different static (no