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Publikováno v:
Surface and Interface Analysis. 38:1687-1691
By radiotracer diffusion experiments, it is shown that the 31Si diffusivity in Si-rich nonstoichiometric amorphous silicon-nitride layers (Si3+xN4−x) sharply drops to low values at a temperature of 1075 °C and is unmeasurable at lower temperatures
Publikováno v:
Thin Solid Films. :29-32
This study reports on the evolution of Cu(In,Ga)Se2 film surface orientation during growth and on the substrate influence on the resulting film texture. A thermal evaporation process deposits 0.5–1 μm thick Cu-poor Cu(In,Ga)Se2 layers with constan
Publikováno v:
Journal of Crystal Growth. 264:178-183
In order to analyze grain growth on the basis of a kinetic growth model, this study reports on annealing experiments with thin Cu(In, Ga)Se 2 films. The substrate heater in an ultra-high vacuum chamber serves to anneal Cu(In, Ga)Se 2 films of 1 μm t
Publikováno v:
Journal of Crystal Growth. 259:47-51
We study the initial growth stage of Cu(In,Ga)Se 2 on Mo films on glass, as the typical back contact for Cu(In,Ga)Se 2 solar cells. A thermal evaporation process deposits Cu(In,Ga)Se 2 of nominal 3 nm thickness at different rates R and substrate temp
Publikováno v:
Journal of the European Ceramic Society. 21:2621-2628
Due to their medium to high permittivity values, ceramic microwave materials are attractive as building blocks for miniaturised antenna solutions. Further advantages are low dielectric losses and an excellent temperature stability of standard ceramic
Publikováno v:
ChemInform. 25
Autor:
Andreas Fell, M. Mesec, D. Manz, A. Bentzen, D. H. Neuhaus, Ralf Lüdemann, Daniel Kray, T. Schlenker, E. Sauar, Gerhard Willeke, Bernd Bitnar, Ralph Müller, Monica Aleman, Bernold Richerzhagen, Sybille Hopman, Alexandre Pauchard, Stefan W. Glunz, Kuno Mayer
Publikováno v:
2008 33rd IEEE Photovoltaic Specialists Conference.
The introduction of selective emitters underneath the front contacts of solar cells can considerably increase the cell efficiency. Thus, cost-effective fabrication methods for this process step would help to reduce the cost per W p of silicon solar c
Publikováno v:
Aktuelle Urologie. 37
Publikováno v:
MRS Proceedings. 763
We investigate growth mechanisms of Cu(In, Ga)Se2 on Mo films on glass, as the typical back contact for Cu(In, Ga)Se2 solar cells. A thermal evaporation process deposits Cu(In, Ga)Se2of nominal 3 nm thickness at different rates R and substrate temper