Modelling of distribution level coreless induction furnace for rapid voltage change assessment

Autor: T. Sarnet, T. Trummal, Jako Kilter

Publikováno v: Electric Power Systems Research. 195:107151

This paper proposes a mathematical model for a distribution level, directly fed core-less, induction furnace that can be used for network voltage behavior related studies performed by the network operators. The objective of the model is to represent

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::5a0ff8355e2db45f4335abcb0a841407
https://doi.org/10.1016/j.epsr.2021.107151

Laser-induced forward transfer for improving fine-line metallization in photovoltaic applications

Autor: B. Mouhamadou, T. Sarnet, Philippe Delaporte, M. I. Sanchez-Aniorte, Anne-Patricia Alloncle

Publikováno v: Applied physics. A, Materials science & processing
Applied physics. A, Materials science & processing, Springer Verlag, 2016, 122 (6), ⟨10.1007/s00339-016-0113-9⟩
Applied physics. A, Materials science & processing, 2016, 122 (6), ⟨10.1007/s00339-016-0113-9⟩

International audience; Grand challenges to create new front metallization techniques in photovoltaic focus considerable attention on laser-induced forward transfer (LIFT) approach. This alternative method aims to overcome the limitations of the well

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0d4eb0a9d0947e3b2e3d0f44369890ed
https://hal.archives-ouvertes.fr/hal-01418503

Laser thermal processing using an optical coating for ultra shallow junction formation

Autor: Dominique Débarre, J.-L. Santailler, H. Akhouayri, D. Camel, C. Laviron, J. Boulmer, G. Kerrien, J. Venturini, D. Berard, M. Hernandez, T. Sarnet

Publikováno v: Materials Science and Engineering: B. :105-108

Semiconductor doping is a critical step in microelectronic device fabrication. Particularly, ultra-shallow junction formation for the CMOS 45-nm node is today intensively studied. Laser thermal processing (LTP) has already shown potentiality to achie

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::ab17623e6520e99dba703561928b8b1c
https://doi.org/10.1016/j.mseb.2004.07.092

Gas immersion laser doping (GILD) for ultra-shallow junction formation

Autor: Dominique Débarre, C. Laviron, M. Hernandez, M.N. Semeria, T. Sarnet, J. Boulmer, G. Kerrien

Publikováno v: Thin Solid Films. :106-109

Gas immersion laser doping (GILD) is a very attractive technique to realize the ultra-shallow and highly doped junctions required by the International Technology Roadmap for Semiconductors (ITRS) for future CMOS technologies. In the present work, gas

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::b759b2ee7df4e61115fa464cf6409dbf
https://doi.org/10.1016/j.tsf.2003.11.151

Laser thermal processing for ultra shallow junction formation: numerical simulation and comparison with experiments

Autor: Dominique Débarre, D. Zahorski, G. Kerrien, J.-L. Santailler, C. Laviron, D. Camel, J. Boulmer, M.N. Semeria, J. Venturini, M. Hernandez, T. Sarnet

Publikováno v: Applied Surface Science. :345-351

In the last few years, laser thermal processing (LTP) has become a potential solution for sub-0.1 μm technology requirements, as focused by the international technology roadmap for semiconductors (ITRS). This paper presents a numerical simulation of

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::7d80445a0faded0525c6cfc9a213cc0b
https://doi.org/10.1016/s0169-4332(02)01395-8