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pro vyhledávání: '"T. S. Gleckler"'
Autor:
B. A. Duell, E. A. Bryan, Catherine J. Page, Shannon W. Boettcher, T. S. Gleckler, D. P. Nguyen, C. A. Crump, Keenan N. Woods, E. C. Waddington, M. R. Nellist
Publikováno v:
RSC Advances. 7:39147-39152
Zirconium oxide has received considerable attention as a dielectric component for microelectronic applications. However, crystallization at relatively low temperatures results in the formation of grain boundaries and high leakage current densities. D