Zobrazeno 1 - 2
of 2
pro vyhledávání: '"T. S. Chengt"'
Autor:
J.W. Orton, G B Ren, J. Morgan, T. S. Chengt, S E Hoopert, C. T. Foxont, Eric C. Larkins, Ian Harrison, G. M. Laws
Publikováno v:
MRS Proceedings. 482
We report on the fabrication and characterisation gallium nitride light emitting diodes (LEDs) grown by molecular beam epitaxy on (0001) oriented sapphire and (111)B GaAs substrates. The current voltage characteristics of the devices grown on sapphir
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::89763d0754ba8ee6ba125dd733798fec
https://doi.org/10.1557/proc-482-1113
https://doi.org/10.1557/proc-482-1113
Autor:
S. A. Galloway, Colin J. Humphreys, Y. Xin, C. T. Foxont, J. Brock, D. Evanst, D. M. Tricker, Paul D. Brown, T. S. Chengt
Publikováno v:
MRS Proceedings. 482
Epitaxial GaN grown by MBE has been characterised using the combined techniques of scanning electron microscopy / cathodoluminescence, reflection high energy electron diffraction (RHEED), and conventional transmission electron microscopy. Variations
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c455b21a177eb699ef5532ea8d352e02
https://doi.org/10.1557/proc-482-399
https://doi.org/10.1557/proc-482-399