Zobrazeno 1 - 4
of 4
pro vyhledávání: '"T. S. Boscke"'
Autor:
Sergei V. Kalinin, Jan Paul, Stefan Müller, A. Kersch, Thomas Mikolajick, Uwe Schröder, Dominik Martin, Till Schlösser, S. Riedel, Tony Schenk, P. Polakowski, Johannes Müller, Thomas M. Arruda, Amit Kumar, R. van Bentum, Ekaterina Yurchuk, Konrad Seidel, K. Khullar, Wenke Weinreich, Roman Boschke, T. S. Boscke
Publikováno v:
2013 IEEE International Electron Devices Meeting.
With the ability to engineer ferroelectricity in HfO2 thin films, manufacturable and highly scaled MFM capacitors and MFIS-FETs can be implemented into a CMOS-environment. NVM properties of the resulting devices are discussed and contrasted to existi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2ea18b6d9fa3884bcf0ddb7145711427
https://doi.org/10.1109/iedm.2013.6724605
https://doi.org/10.1109/iedm.2013.6724605
Autor:
T. S. Boscke, D. Kania, A. Helbig, C. Schollhorn, M. Dupke, P. Sadler, M. Braun, T. Roth, D. Stichtenoth, T. Wutherich, R. Jesswein, D. Fiedler, R. Carl, J. Lossen, A. Grohe, H.-J. Krokoszinski
Publikováno v:
2012 IEEE 38th Photovoltaic Specialists Conference (PVSC) PART 2.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6f77dae5a88c0239b7380e0f0e8a1e73
https://doi.org/10.1109/pvsc-vol2.2013.6656730
https://doi.org/10.1109/pvsc-vol2.2013.6656730
Autor:
T. S. Boscke, Byoung Hun Lee, Stephan Kudelka, Johannes Heitmann, Seung-Chul Song, A. Avellan, Wolfgang H. Krautschneider, Uwe Schröder, J. Price, Paul Kirsch, B.S. Ju, Christian Fachmann, R. Jammy, G. Pant, Bruce E. Gnade, Shrinivas Govindarajan, C. Krug, P. Y. Hung
Publikováno v:
2006 International Electron Devices Meeting.
We show for the first time that control of the crystalline phases of HfO2 by tetravalent (Si) and trivalent (Y,Gd) dopants enables significant improvements in the capacitance equivalent thickness (CET) and leakage current in capacitors targeting deep
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9220aea91b3b140977ecb1315958ae88
https://doi.org/10.1109/iedm.2006.347011
https://doi.org/10.1109/iedm.2006.347011
Autor:
T. S. Boscke, P. Sivasubramani, Shrinivas Govindarajan, B. E. Gnade, Uwe Schröder, R. Jammy, Paul Kirsch, Byoung Hun Lee, H.-H. Tseng, Shriram Ramanathan
Publikováno v:
Applied Physics Letters. 91:062906
Rare earth (RE) doping (Gd, Er, Dy) of HfO2 reduces leakage current by three orders of magnitude compared with pure HfO2. The key to reducing HfO2 leakage current and equivalent oxide thickness (EOT) is stabilization of the higher permittivity tetrag
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2c889b154fe1bddceba37526c5763830
https://doi.org/10.1063/1.2768002
https://doi.org/10.1063/1.2768002