Zobrazeno 1 - 10
of 12
pro vyhledávání: '"T. S. Böscke"'
Autor:
P. Kücher, Lars Oberbeck, Dayu Zhou, M. Reinicke, Lothar Frey, T. S. Böscke, Johannes Müller, Wenke Weinreich, Uwe Schröder, M. Lemberger
Publikováno v:
Microelectronic Engineering. 86:1818-1821
A broad compositional range of the dielectric material Zr"1"-"xHf"xO"2 was evaluated with respect to its applicability in DRAM storage capacitors. The paper reports on phase composition, crystallization behavior, and electrical properties of the mixe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::191946d04695312d0283af1f9692d85e
https://doi.org/10.1016/j.mee.2009.03.076
https://doi.org/10.1016/j.mee.2009.03.076
Autor:
T. S. Böscke, Patrick S. Lysaght, Pui Yee Hung, Matthew Wormington, Paul Kirsch, Hsing-Huang Tseng, David Bowen, Raj Jammy
Publikováno v:
ECS Transactions. 16:149-152
This study presents the application of X-ray metrology for phase engineering of high-k materials. In particular, grazing angle X-ray diffraction (GIXRD) is used to measure the phase and lattice constants of HfO2 doped with varying amounts of SiO2. Us
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::26e1e9ee0bed6b929ce2479fd8815f53
https://doi.org/10.1149/1.2981596
https://doi.org/10.1149/1.2981596
Publikováno v:
IEEE Electron Device Letters. 33:185-187
We report the fabrication of completely CMOS-compatible ferroelectric field-effect transistors (FETs) by stabilization of a ferroelectric phase in 10-nm-thin Si:HfO2. The program and erase operation of this metal-ferroelectric-insulator-silicon FET (
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d293360e128a7a47f279a24328b7b0fe
https://doi.org/10.1109/led.2011.2177435
https://doi.org/10.1109/led.2011.2177435
Autor:
Thomas Mikolajick, Jonas Sundqvist, Martin Lemberger, Johannes Müller, L. Wilde, I. Müller, T. S. Böscke, Ulrich Böttger, Lothar Frey, Uwe Schröder, P. Kücher
Structural and electrical evidence for a ferroelectric phase in yttrium doped hafnium oxide thin films is presented. A doping series ranging from 2.3 to 12.3 mol% YO(1.5) in HfO(2) was deposited by a thermal atomic layer deposition process. Grazing i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::14f139febd350582eb1c29f5d4e5bb39
https://opus4.kobv.de/opus4-fau/frontdoor/index/index/docId/2624
https://opus4.kobv.de/opus4-fau/frontdoor/index/index/docId/2624
Autor:
D. Bräuhaus, T. S. Böscke, Ulrich Böttger, Thomas Mikolajick, Stefan Mueller, Uwe Schröder, Johannes Müller, Lothar Frey
Publikováno v:
Nano letters. 12(8)
The transition metal oxides ZrO(2) and HfO(2) as well as their solid solution are widely researched and, like most binary oxides, are expected to exhibit centrosymmetric crystal structure and therewith linear dielectric characteristics. For this reas
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::55c5be690641afecba8f9d4634490f17
https://pubmed.ncbi.nlm.nih.gov/22812909
https://pubmed.ncbi.nlm.nih.gov/22812909
Publikováno v:
2011 International Electron Devices Meeting.
We report the discovery of ferroelectricity in crystalline hafnium silicon oxide. If HfO 2 based thin films, at a composition where the tetragonal phase is not yet stable, are crystallized in presence of a cap, the formation of an orthorhombic phase
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::05f6562cd532f0947d3ceb48b73da1eb
https://doi.org/10.1109/iedm.2011.6131606
https://doi.org/10.1109/iedm.2011.6131606
Autor:
Byoung Hun Lee, B.S. Ju, Bruce E. Gnade, Angus I. Kingon, Paul Kirsch, Jiacheng Huang, Gennadi Bersuker, Chadwin D. Young, Manuel Quevedo-Lopez, P. Sivasubramani, Rajarao Jammy, H.R. Harris, Jesse S. Jur, Robert M. Wallace, Daniel J. Lichtenwalner, Jiyoung Kim, S. Govindarajan, T. S. Böscke, Siddarth A. Krishnan
Publikováno v:
2007 IEEE Symposium on VLSI Technology.
A dipole moment model explaining Vt tuning in HfSiON gated nFETs is proposed and its impact on performance and reliability is presented. La, Sc, Er, and Sr dopants are utilized due to their differing electronegativities and ionic radii. These dopants
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e1b1f0c344ba15e199cf92f320b7cd0d
https://doi.org/10.1109/vlsit.2007.4339730
https://doi.org/10.1109/vlsit.2007.4339730
Autor:
Byoung Hun Lee, P. Sivasubramani, Seung-Chul Song, S. Govindarajan, Manuel Quevedo-Lopez, J. Price, Shriram Ramanathan, Bruce E. Gnade, Paul Kirsch, T. S. Böscke, R.W. Wallace, Uwe Schröder, Rajarao Jammy, P. Y. Hung
Publikováno v:
2007 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA).
We demonstrate electrical properties of rare earth (RE)-doped HfO2 and ZrO2 for application as higher permittivity (k) dielectrics in logic and memory devices. X-ray diffraction (XRD) results show that Dy, Er, and Gd doping stabilizes the higher-k te
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::053c7238f9e2efc8c915242e039779e0
https://doi.org/10.1109/vtsa.2007.378912
https://doi.org/10.1109/vtsa.2007.378912
Autor:
T. S. Böscke, Ulrich Böttger, Thomas Mikolajick, Lothar Frey, Jonas Sundqvist, P. Kücher, Johannes Müller, D. Bräuhaus, Uwe Schröder
Publikováno v:
Applied Physics Letters. 99:112901
We report the observation of ferroelectricity in capacitors based on hafnium-zirconium-oxide. Hf0.5Zr0.5O2 thin films of 7.5 to 9.5 nm thickness were found to exhibit ferroelectric polarization-voltage hysteresis loops when integrated into TiN-based
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1cf3f0c247cbb9aa4cf3990aca38a63f
https://doi.org/10.1063/1.3636417
https://doi.org/10.1063/1.3636417
Autor:
D. Bräuhaus, Johannes Müller, Thomas Mikolajick, T. S. Böscke, Ulrich Böttger, Uwe Schröder, St. Teichert
Publikováno v:
Applied Physics Letters. 99:112904
We investigated phase transitions in ferroelectric silicon doped hafnium oxide (FE-Si:HfO2) by temperature dependent polarization and x-ray diffraction measurements. If heated under mechanical confinement, the orthorhombic ferroelectric phase reversi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9b55c1537115217a8c6bb6207f1b4c9b
https://doi.org/10.1063/1.3636434
https://doi.org/10.1063/1.3636434