Zobrazeno 1 - 10
of 65
pro vyhledávání: '"T. S. Arun Samuel"'
Publikováno v:
Silicon. 15:2385-2405
Publikováno v:
Hybrid Intelligent Approaches for Smart Energy. :181-204
Publikováno v:
Journal of Electronic Materials.
Publikováno v:
Silicon. 14:11209-11218
Publikováno v:
Circuits, Systems, and Signal Processing. 41:3350-3371
Publikováno v:
Silicon. 14:8233-8241
Publikováno v:
Journal of Electronic Materials. 50:7037-7043
This research intends to develop an analytical model for a heterojunction graphene nanoribbon double-gate tunnel field-effect transistor with a stacked SiO2/HfO2 layer. Embodying indium antimony as the source material and silicon as both channel and
Autor:
A. Sharon Geege, T. S. Arun Samuel
Publikováno v:
Silicon.
Publikováno v:
Applied Physics A. 128