Loss assessment in random crystal polarity gallium phosphide microdisks grown on silicon

Autor: T. Rohel, Alexandre Beck, Olivier de Sagazan, Yoan Léger, Charles Cornet, Christelle Pareige, Julie Le Pouliquen, Yannick Dumeige, Alejandro Lorenzo-Ruiz, Rasool Saleem-Urothodi, Rozenn Bernard, Antoine Létoublon

Publikováno v: Optics Letters
Optics Letters, Optical Society of America-OSA Publishing, 2020, 45 (16), pp.4646. ⟨10.1364/OL.399935⟩
Optics Letters, 2020, 45 (16), pp.4646. ⟨10.1364/OL.399935⟩

International audience; III-V semiconductors grown on silicon recently appeared as a promising platform to decrease the costs of photonic components and circuits. For nonlinear optics, specific features of the III-V crystal arising from the growth on

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bd92713ffce93a93ffd1a17f615bbcae
https://hal.archives-ouvertes.fr/hal-02926153/document

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A Stress-Free and Textured GaP Template on Silicon for Solar Water Splitting

Autor: Simon Charbonnier, Gilles Patriarche, Maxime Vallet, Nicolas Bertru, Antoine Létoublon, Charles Cornet, Eric Tournié, Ida Lucci, Laurent Cerutti, Laurent Pedesseau, Anne Ponchet, T. Rohel, Jean-Baptiste Rodriguez, Yoan Léger, Pascal Turban

Publikováno v: Advanced Functional Materials
Advanced Functional Materials, Wiley, In press, 〈10.1002/adfm.201801585〉
Advanced Functional Materials, Wiley, 2018, 28 (30), pp.1801585. ⟨10.1002/adfm.201801585⟩
Advanced Functional Materials, 2018, 28 (30), pp.1801585. ⟨10.1002/adfm.201801585⟩

International audience; This work shows that a large‐scale textured GaP template monolithically integrated on Si can be developed by using surface energy engineering, for water‐splitting applications. The stability of (114)A facets is first shown

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bcd7605679df159ede673d9187f74d11
https://hal.archives-ouvertes.fr/hal-01803990

Abrupt GaP/Si hetero-interface using bistepped Si buffer

Autor: Charles Cornet, Antoine Létoublon, Mounib Bahri, Karine Tavernier, M.F. da Silva, T. Nguyen Thanh, Anne Ponchet, Rozenn Bernard, Ronan Tremblay, Y. Ping Wang, A. Le Corre, Samy Almosni, Olivier Durand, T. Rohel, Gilles Patriarche, Jithesh Kuyyalil, Julien Stodolna, Ludovic Largeau, César Magén

Publikováno v: Applied Physics Letters
Applied Physics Letters, American Institute of Physics, 2015, 107 (19), pp.191603. ⟨10.1063/1.4935494⟩
Applied Physics Letters, 2015, 107 (19), pp.191603. ⟨10.1063/1.4935494⟩
Zaguán. Repositorio Digital de la Universidad de Zaragoza
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International audience; We evidence the influence of the quality of the starting Si surface on the III-V/Si interface abruptness and on the formation of defects during the growth of III-V/Si heterogeneous crystal, using high resolution transmission e

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c827752c0c70e0281f9cd84afca06236
https://hal.archives-ouvertes.fr/hal-01228809/file/1.4935494.pdf

Preferential incorporation of substitutional nitrogen near the atomic step edges in diluted nitride alloys

Autor: T. Nguyen Thanh, A. Rambaud, Antoine Létoublon, Olivier Durand, Jithesh Kuyyalil, A. Le Corre, T. Rohel, Thomas Quinci, Samy Almosni, N. Bertru, Charles Cornet

Publikováno v: Applied Physics Letters
Applied Physics Letters, 2012, 101 (25), pp.251906. ⟨10.1063/1.4772785⟩
Applied Physics Letters, American Institute of Physics, 2012, 101 (25), pp.251906. ⟨10.1063/1.4772785⟩

International audience; We have investigated the influence of the surface roughness on nitrogen incorporation during the molecular beam epitaxy of diluted nitrides, independently of the other growth parameters. GaPN/GaP layers grown simultaneously on

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::da8a6facabbaafe1a1f6df5eea7f9289
https://hal.science/hal-00788403