Zobrazeno 1 - 10
of 19
pro vyhledávání: '"T. Rickes"'
Publikováno v:
Integrated Ferroelectrics. 72:31-37
We report on a novel reference voltage scheme for FRAMs which solves most problems like fatigue, temperature dependency, voltage drop, etc still present in other reference schemes: dynamic reference scheme. It tracks the variations of the ferroelectr
Publikováno v:
Optics Communications. 227:133-142
We report enhancement of third-harmonic generation in a nonlinear optical medium, prepared in maximum coherence by Stark-chirped rapid adiabatic passage (SCRAP). In this technique a strong off-resonant infrared radiation pulse induces an adiabatic pa
Publikováno v:
Optics Communications. 220:353-359
We compare lineshapes obtained in laser-induced fluorescence and resonantly enhanced multi-photon ionisation, resultingfrom coherent pulsed excitation of a two-photon transition in xenon atoms. We find that excitation profiles probed by ionisation sh
Publikováno v:
Optics Communications. 204:413-423
We show that the technique of Stark-chirped rapid adiabatic passage (SCRAP), hitherto used for complete population transfer between two quantum states, offers a simple and robust method for creating coherent superpositions of states. SCRAP uses two l
Autor:
Rainer Waser, Steve Gilbert, Cezary Pietrzyk, James W Grace, Scott R. Summerfelt, John Y. Fong, Theodore S. Moise, Hugh P. McAdams, Angela Wang, Dave Lee, Jun Amano, Ralph H. Lanham, Jürgen T. Rickes
Publikováno v:
Integrated Ferroelectrics. 48:109-118
We present a novel sense-amplifier for FeRAM that is about 2.5 times faster than the conventional sense-amplifier. In addition, it has truly independent sense and write-back capability and resolves the well-known bit-line capacitance imbalance issues
Autor:
Leonid P. Yatsenko, K. Böhmer, Bruce W. Shore, Nikolay V. Vitanov, T. Rickes, Thomas Halfmann, Klaas Bergmann
Publikováno v:
Optics Communications. 199:117-126
The spectral width of an atomic absorption line, observed with a steady light source, typically increases as the light intensity increases, an effect known as power broadening. In this paper, we point out classes of pulsed-light observations where po
Publikováno v:
Journal of Applied Physics. 89:3420-3425
The emerging ferroelectric technology needs a reliable model for the simulation of the ferroelectric capacitors. This model would play a crucial role in designing new ferroelectric nonvolatile memories. As a main requirement, such a model must allow
Publikováno v:
Integrated Ferroelectrics. 34:1-10
A standard 1T/1C and chain-type ferroelectric memory architecture are presented. The standard memory cell consists of a transistor connected in series to a ferroelectric capacitor while the chain-type cell connects these elements in parallel. Based o
Publikováno v:
Integrated Ferroelectrics. 32:295-302
The design of the new ferroelectric memories requires a ferroelectric capacitor model that should be easy to incorporate in a circuit simulator and easy to calibrate based on the experimental measu...
Publikováno v:
Integrated Ferroelectrics. 40:65-82
The basic architecture of ferroelectric memories (FeRAMs) is known to be very similar to that of DRAM. Consequently, many design issues for FeRAM are already known from DRAM and have been solved by applying prior DRAM solutions. However, there are al