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pro vyhledávání: '"T. R. Neal"'
Publikováno v:
MRS Proceedings. 495
Amorphous silicon carbide (SiC) was deposited by plasma enhanced chemical vapor deposition (PECVD) in an Applied Materials (AMT5000) tool from sources of trimethylsilane (3MS) and either argon or nitrogen. A deposition rate of ≈ 800 nm/min on a 150
Autor:
T R, Neal
Publikováno v:
Indiana medicine : the journal of the Indiana State Medical Association. 88(5)
Publikováno v:
Topics in health care financing. 13(1)