Zobrazeno 1 - 10
of 12
pro vyhledávání: '"T. R. Lundquist"'
Autor:
T. Crawford, C. Farrell, Christophe Dorrer, Marius Rutkauskas, Kenneth L. Marshall, T. R. Lundquist, Praveen Vedagarbha, Dan Bodoh, Kent Erington, Derryck T. Reid
Publikováno v:
Conference on Lasers and Electro-Optics.
The rapidly developing semiconductor industry demands constant innovations in optoelectronic imaging of semiconductor integrated circuits to keep up with continuing device scaling. It was recently shown that two-photon laser-assisted device alteratio
Autor:
Derryck T. Reid, Christophe Dorrer, T. R. Lundquist, C. Farrell, Praveen Vedagarbha, Kenneth L. Marshall, Marius Rutkauskas
Publikováno v:
CLEO: 2015.
Comparison of high-resolution sub-surface microscopy shows that illumination with linear polarization resolves an edge with resolutions of 95 nm and 120 nm, depending on E-field orientation, while radial polarization achieves a resolution of 98 nm.
Autor:
T. R. Lundquist, C. Nemirow, Praveen Vedagarbha, C. Farrell, Derryck T. Reid, Dan Bodoh, Kent Erington, K. A. Serrels, Neel Leslie
Publikováno v:
2014 IEEE International Reliability Physics Symposium.
Laser-assisted device alteration is an established technique used to identify critical speed paths in integrated circuits. By using a synchronized pulsed laser, logic transition waveforms have been acquired that can be used to measure propagation del
Autor:
Kent Erington, C. Farrell, T. R. Lundquist, Dan Bodoh, K. A. Serrels, Neel Leslie, Derryck T. Reid, Praveen Vedagarbha
Publikováno v:
Optics express. 21(24)
Optoelectronic imaging of integrated-circuits has revolutionized device design debug, failure analysis and electrical fault isolation; however modern probing techniques like laser-assisted device alteration (LADA) have failed to keep pace with the se
Autor:
Praveen Vedagarbha, Kent Erington, Dan Bodoh, C. Farrell, K. A. Serrels, Derryck T. Reid, Neel Leslie, T. R. Lundquist
Publikováno v:
CLEO: 2013.
By inducing two-photon absorption to perturb the switching characteristics of sensitive transistors located within the active layer of a proprietary 28-nm silicon test chip, we demonstrate time-resolved nonlinear laser-assisted device alteration.
Publikováno v:
Conference on Lasers and Electro-Optics 2012.
By inducing two-photon absorption within the active layer of a proprietary silicon test chip, we demonstrate here solid-immersion-lens-enhanced nonlinear frequency-variation mapping of a 500-MHz ring oscillator circuit at 1560 nm. This work compares
Publikováno v:
Heriot-Watt University
By inducing two-photon absorption within the device layer of a proprietary silicon test chip, the first nonlinear variant of X-variation mapping is reported by demonstrating frequency mapping of a ring oscillator circuit at 1.55µm.
Publikováno v:
Journal of microscopy. 214(Pt 3)
Summary Circuit editing of integrated circuit (IC) devices fabricated in 100-nm and smaller technologies has moved IC microsurgery into nanosurgery. Although the dimensions are challenging, an additional challenge is to mill the dielectric materials
Publikováno v:
International Symposium for Testing and Failure Analysis.
The success of circuit editing depends not only on x-y navigation to precise coordinates on the integrated circuits (IC), but also on precise z navigation. Certainly, secondary electron (SE) emission has proven to be the most accurate monitoring tech
Publikováno v:
Optics Letters. 37:1778
We report octave-spanning super-continuum generation in a silica photonic crystal fiber (PCF) pumped by a compact, efficient, mode-locked all-normal dispersion Yb:fiber laser. The laser achieved 45% optical-to-optical efficiency by using an optimized