Zobrazeno 1 - 10
of 47
pro vyhledávání: '"T. Przesławski"'
Autor:
T. Przesławski, A. Wolkenberg
Publikováno v:
Applied Surface Science. 254:6736-6741
We propose using collected galvano-magnetic data on MBE samples of n-type undoped epi-layers of InAs, In0.57Ga0.47As and GaAs on InP semi-insulating and GaAs semi-insulating substrates to characterize their charge transport properties. Hall concentra
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::68df0b78b83fe9eb64698cbbb62080b6
https://doi.org/10.1016/j.apsusc.2008.04.061
https://doi.org/10.1016/j.apsusc.2008.04.061
Autor:
T. Przesławski, A. Wolkenberg
Publikováno v:
Sensors and Actuators A: Physical. 126:292-299
We report the key galvanomagnetic properties of Hall and magnetoresistor cross-shaped sensors with lateral dimensions 2 mm × 3 mm. The measured parameters of these devices gave an interesting insight into their behavior at temperatures ranging from
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::006aa2c633ca78c2c0de219a098e68c3
https://doi.org/10.1016/j.sna.2005.10.025
https://doi.org/10.1016/j.sna.2005.10.025
Publikováno v:
Materials Science and Engineering: B. 110:79-86
At low temperatures, ionized impurities are the dominant scattering mechanism limiting carrier mobilities in most semiconductors. Calculations of ionized impurity scattering have usually been based on the assumption that the ions scatter independentl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a2691fd46b67473e6f70058f9c813391
https://doi.org/10.1016/j.mseb.2004.03.009
https://doi.org/10.1016/j.mseb.2004.03.009
Publikováno v:
physica status solidi (c). 1:392-395
We discuss several problems of optimisation of the MBE growth of thick (3.5 ÷ 9 μm) InAs epilayers on GaAs(100) substrates. Three types of layers were grown: undoped, Si-doped, and Be-doped. The whole growth process has been divided into two parts:
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::debc409e5c1fa2363a9e09122ba70b67
https://doi.org/10.1002/pssc.200303944
https://doi.org/10.1002/pssc.200303944
Publikováno v:
Applied Physics A: Materials Science & Processing. 77:937-945
The magnetic field dependence of conductivity tensor components, magnetoresistance, and the Hall coefficient have been analyzed in an n-type Si-doped GaAs epilayer at temperatures from 11 to 295 K. Carriers from the conduction band and the impurity b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a6bac25082bd7cb6486be677fdca540b
https://doi.org/10.1007/s00339-002-1897-3
https://doi.org/10.1007/s00339-002-1897-3
Autor:
Jadwiga Bak-Misiuk, Elżbieta Dynowska, Andrzej Misiuk, K. Reginski, A. Shalimov, T. Przesławski, J. Kaniewski, Jürgen Härtwig, J. Trela
Publikováno v:
Crystal Research and Technology. 38:302-306
Effect of high temperature-high pressure treatment on strain state of the lattice mismatched InAs layers grown on the GaAs substrate was investigated by means of X-ray diffraction methods. The InAs layers were grown on (100) oriented GaAs by molecula
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d4c293f5cc49b559a1aa2fb437b35ffc
https://doi.org/10.1002/crat.200310035
https://doi.org/10.1002/crat.200310035
Publikováno v:
Journal of Physics and Chemistry of Solids. 64:7-14
At low temperatures In 0.53 Ga 0.47 As samples show an increase of carrier concentration, which can be explained in terms of a two carriers transport model. This type of problem exists since the beginning of the semiconductor era, dating back to mono
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9e131dc82a5dd0054fb30c164c21520b
https://doi.org/10.1016/s0022-3697(02)00162-2
https://doi.org/10.1016/s0022-3697(02)00162-2
Publikováno v:
Materials Science and Engineering: B. 90:176-179
Molecular beam epitaxy has been used to grow epitaxial InAs onto (0 0 1) oriented SI–GaAs, at different substrate temperatures T s =(440–506 °C) and different V/III flux ratios. No influence of growth rate on the microstructure of the layers has
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::92092190f447bd543a4bd543eaf9acf2
https://doi.org/10.1016/s0921-5107(01)00936-9
https://doi.org/10.1016/s0921-5107(01)00936-9
Publikováno v:
Materials Science and Engineering: B. 77:250-254
The aim of this paper is to present some problems in the materials engineering connected with miniaturization of geometric dimensions of electronic structures. The examples are taken from InAs epitaxial layers. Our results as well as various results
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::20e49ce66475ae41e1d433c026e1b517
https://doi.org/10.1016/s0921-5107(00)00498-0
https://doi.org/10.1016/s0921-5107(00)00498-0
Publikováno v:
Acta Physica Polonica A. 97:331-336
Thin, undoped heterostructures are very interesting from the point of view of their transport properties. In such samples the contribution of the conduction band or valence band carriers to the conductivity can be small and effects associated with th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::53cf9c07b968df9db14ca8b88b9684d5
https://doi.org/10.12693/aphyspola.97.331
https://doi.org/10.12693/aphyspola.97.331