Optical properties of GaN grown on Si (111) by gas source molecular beam epitaxy with ammonia

Autor: G. Kipshidze, Vladimir Kuryatkov, Sergey A. Nikishin, Henryk Temkin, Andrey Zubrilov, T. Prokofyeva, Mark Holtz

Publikováno v: Journal of Applied Physics. 91:1209-1212

We report a study of the optical properties of GaN grown on Si(111) by gas source molecular beam epitaxy with ammonia. Temperature dependence of edge luminescence was studied in the range of 77–495 K for samples with low background carrier concentr

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::87816241ace4a46901474257584146ef
https://doi.org/10.1063/1.1430535

Composition dependence of the optical phonon energies in hexagonal AlxGa1−xN

Autor: S. Williams, T. Prokofyeva, K. Copeland, Mark Holtz, V. Tretyakov, M. Seon, J. Vanbuskirk, Sergey A. Nikishin, Henryk Temkin

Publikováno v: Journal of Applied Physics. 89:7977-7982

We report optical studies on AlxGa1−xN alloy layers across the full composition range. The series of alloy layers was grown on (111)-oriented silicon substrates using gas-source molecular beam epitaxy. From reflectance measurements, we determine th

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::3437593f7420c47eb26f9d3b3b62768f
https://doi.org/10.1063/1.1372661

The STAR experiment at the relativistic heavy ion collider

Autor: J.W. Harris, D.L. Adams, N. Added, S. Ahmad, S.A. Akimenko, B.D. Anderson, G.T. Anderson, R.M. Anjos, A. Aprahamian, Yu.I. Arestov, E. Atkin, A. Baldwin, V. Baublis, M.E. Beddo, N.I. Belikov, R. Bellwied, V.I. Belousov, S. Bennett, J. Bercovitz, I. Bertram, J. Bielecki, F. Bieser, N.N. Biswas, M.A. Bloomer, B.E. Bonner, P.P. Brady, W.J. Braithwaite, L. Braun, J.A. Buchanan, N. Carlin, J.B. Carroll, D.A. Cebra, A.D. Chacon, C.S. Chan, K-S. Chan, S.I. Chase, M.G. Cherney, R.K. Choudhury, W. Christie, B.V. Chujko, J.M. Clement, M.D. Corcoran, T.M. Cormier, J.G. Cramer, H.J. Crawford, A.M. Davidenko, J.W. Dawson, R. Debbe, A.A. Derevschikov, P.A. De Young, W. Dominik, L. Dou, J.E. Drape, I. Duck, W.R. Edwards, S.E. Eiseman, J.M. Engelage, S.V. Erin, A. Etkin, D. Ferenc, I. Flores, K.J. Foley, Z. Fraenkel, A. French, E. Friedlander, D. Fritz, U. Garg, M. Gazdzicki, V. Ghazikhanian, G. Glass, W. Gong, O.A. Grachov, J. Grebiezkow, D. Greiner, L.C. Greiner, E. Grimson, D.P. Grosnick, V. Grushin, V.J. Guarino, W.N. Haberichter, R.W. Hackenburg, J. Hall, T.J. Hallman, W.E. Hearn, D.A. Hill, N. Hill, A.S. Hirsch, E. Hjort, G.W. Hoffmann, H. Huang, T.J. Humanic, G.J. Igo, P.M. Jacobs, R. Jayanti, P.G. Jones, E. Judd, M.L. Justice, K. Kadija, M. Kaplan, P.J. Karol, T. Kasprzyk, D. Keane, V.P. Kenney, A. Khodinov, S.A. Kleinfelder, A.S. Konstantinov, D. Kostin, I. Kotov, V. Kozlov, M.A. Kramer, V. Kuryatkov, R.L. LaPierre, B. Lasiuk, A. Lebedev, M.J. Le Vine, Q. Li, S.J. Lindenbaum, V. Lindenstruth, P.J. Lindstrom, A. Ljubicic, W.J. Llope, R.S. Longacre, D.X. Lopiano, W.A. Love, L. Madansky, S. Margetis, J. Marx, H.S. Matis, Yu.A. Matulenko, C.P. McParland, T.S. McShane, A.P. Meschanin, Z. Milosevich, N. Miphtakhov, K. Mirk, J. Mitchell, J.L. Mitchell, C.F. Moore, S. Mordechai, R. Morse, J. Murgatroyd, G.S. Mutchler, A.I. Mysnick, J. Nasiatka, C.J. Naudet, A. Nazarov, V. Nevolin, T.L. Noggle, S. Novikov, S.B. Nurushev, G. Odyniec, C. Ogilvie, D.L. Olson, A. Oltchak, E. Onishenko, E. Paganis, G. Paic, A.I. Pavlinov, T. Pawlak, W. Peryt, E. Petereit, E.D. Platner, J. Pluta, A.Yu. Polyarush, N.T. Porile, A.M. Poskanzer, D. Prindle, T. Prokofyeva, C. Pruneau, G. Rai, J. Rasson, R.L. Ray, D. Read, R.E. Renfordt, P.J. Riley, H-G. Ritter, J.B. Roberts, D. Roehrich, G. Roger, A.A. Rollefson, J.L. Romero, A.I. Ronzhin, V.L. Rykov, I. Sakrejda, A.C. Saulys, J.J. Schambach, R.P. Scharenberg, L.S. Schroeder, J.E. Seger, V.A. Sergeev, D. Seymour, A. Shalnov, Y.P. Shao, J. Sheen, K.E. Shestermanov, D. Shuman, A. Simakov, L.F. Soloviev, H.M. Spinka, B.K. Srivastava, R. Stock, R. Stone, M. Strikhanov, B. Stringfellow, H. Stroebele, A.T. Sustich, T.J.M. Symons, E.M. Szanto, A.Szanto de Toledo, Yu. Sytsko, J.-L. Tang, S. Tarakanov, M.L. Tincknell, M. Toy, T.A. Trainor, S. Trentalange, O.D. Tsay, I. Tserruya, A.G. Ufimtsev, D.G. Underwood, A. Vander Molen, A. Vanyashin, A.N. Vasiliev, G. Vilkelis, Yu. Volkov, S. Voloshin, D. Vranic, H.J. Ward, J.W. Watson, R.C. Welsh, S. Wenig, G. Westfall, J. Whitfield, C.A. Whitten, H. Wieman, K. Wilson, D.C. Wold, K.L. Wolf, P. Yepes, A. Yokosawa, W. Zhang, K.H. Zhao, X.-Z. Zhu, Y. Zhu, V.E. Zyrin

Publikováno v: Publons

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::54edb1f06ef61e97ab3e421589f25426
https://doi.org/10.1016/0375-9474(94)90633-5

Micro-Raman imaging of GaN hexagonal island structures

Autor: Mark Holtz, M. Seon, Theodore D. Moustakas, T. Prokofyeva, R. Singh, Henryk Temkin, Ferdynand P. Dabkowski

Publikováno v: Applied Physics Letters. 75:1757-1759

We use Raman scattering to obtain a stress map of lateral epitaxy overgrown GaN. Isolated hexagonal islands are grown by selective area overgrowth without a seed layer. Stress mapping is obtained from shifts in the E2 phonon. GaN in the aperture area

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::062a37c008d3dfb75541233ece19ebaa
https://doi.org/10.1063/1.124810

Raman studies of nitrogen incorporation in GaAs1−xNx

Autor: T. Sauncy, T. Prokofyeva, Mark Holtz, Henryk Temkin, Y. Qiu, Sergey A. Nikishin, M. Seon

Publikováno v: Applied Physics Letters. 73:1409-1411

We report direct-backscattering Raman studies of GaAs1−xNx alloys, for x⩽0.03, grown on (001) GaAs. The Raman spectra exhibit a two-mode behavior. The allowed GaAs-like longitudinal-optic phonon near 292 cm−1 is found to red shift at a rate of

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::f3bdcb861847ae3a2bfe41880f4de6a4
https://doi.org/10.1063/1.121959