Zobrazeno 1 - 10
of 41
pro vyhledávání: '"T. Pompl"'
Publikováno v:
IEEE Transactions on Device and Materials Reliability. :1-1
Akademický článek
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Publikováno v:
IEEE Transactions on Device and Materials Reliability. 4:263-267
Experimental time-dependent dielectric breakdown (TDDB) distributions of standard CMOS hardware are used to demonstrate the problem of detecting a range of successive breakdown events, e.g., from the 5th to the 20th. Specifically, the range and the s
Autor:
Hans Reisinger, Christian Schlunder, Karl Hofmann, J. Hatsch, Thomas Baumann, Christian Pacha, Georg Georgakos, T. Kodytek, Klaus Von Arnim, K. Ermisch, T. Pompl, Wolfgang Gustin
Publikováno v:
2010 Symposium on VLSI Technology.
A product-level aging monitor replicating a 40nm CMOS ARM1176 critical path is presented. The monitor enables a separation of the dominating negative bias instability (NBTI) stress, including speed recovery, and the switching-activity dependent hot c
Autor:
I. Yang, F. Zhang, A. Tilke, P. Wrschka, Y.-H. Lin, J. Lian, P. Nguyen, V. Ramanchandran, Gregory M. Johnson, L.S. Leong, Atul C. Ajmera, A. Ebert, S.O. Kim, H. Zhuang, M.-C. Sun, J.-P. Kim, Andy Cowley, Christopher V. Baiocco, J.-H. Ku, W. Lin, J. Greg Massey, Alvin G. Thomas, M. Naujok, A. Vayshenker, G. Leake, A. Fischer, M. Sherony, E. Kaltalioglu, K. Hooper, Dirk Vietzke, C. Griffin, Y.-W. Teh, W. Gao, J. Sudijohno, Manfred Eller, Randy W. Mann, G. Matusiewicz, Y.K. Siew, T. Schiml, Renee T. Mo, S.-M. Choi, R. Knoefler, W.L. Tan, J. Benedict, T. Pompl, J.-H. Yang, F.F. Jamin, Fernando Guarin, K.C. Park, K.-W. Lee, An L. Steegen, Jae-Eun Park, S. Scheer, V. Klee, D.H. Hong, L. Tai, V. Ku, S.L. Liew
Publikováno v:
IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest..
This paper presents a 65nm low power technology offering a dual gate oxide process, multiple Vt devices at a nominal operating voltage of 1.2V, a nine level hierarchical Cu interconnect back-end of line process with low k dielectrics and 0.676mum2 an
Autor:
M. Kerber, W. Xiong, Joe W. McPherson, G.S. Haase, E.T. Ogawa, T. Pompl, K. Schrufer, T. Schulz, Homi C. Mogul, R. Cleavelin
Publikováno v:
2006 IEEE International Reliability Physics Symposium Proceedings.
Future CMOS technology generations may implement multi-gate architectures according to S. M. Kim et al. (2004), D Ha et al. (2004), S.-Y. Kim et al. (2005), W.-S. Liao et al. (2005), S. Maeda et al. (2004), N. Collaert et al. (2005),and C. Jahan et a
Publikováno v:
DAC
Voltage analysis is a major part of design-in reliability as voltage is the driver for electric degradation in dielectrics and MOS devices. Particularly, voltage has the largest influence on gate oxide reliability. An important trend designers should
Autor:
Mark Gardner, Howard R. Huff, H.-J. Li, Chadwin D. Young, Alain C. Diebold, J. Saulters, J. Price, Jeffrey J. Peterson, T. Rhoad, Peter Zeitzoff, P. Y. Hung, Gennadi Bersuker, T. Pompl, George A. Brown
Publikováno v:
Conference Digest [Late News Papers volume included]Device Research Conference, 2004. 62nd DRC..
A fabrication process for HfON, using ion implantation of N/sub 2/ in ALD HfO/sub 2/, was demonstrated. Results showed that a good quality HfON could be formed by N/sub 2/ implantation, which suggests nitrogen implantation can be an alternative high-
Publikováno v:
2002 IEEE International Reliability Physics Symposium. Proceedings. 40th Annual (Cat. No.02CH37320).
The extrinsic oxide failure distributions of 6.8 nm thermal oxide on Czochralski (CZ) silicon wafers was investigated in detail. Using superposition of intrinsic Weibull distributions folded with a normal distribution of oxide thinning in COPs, enabl
Publikováno v:
1999 IEEE International Reliability Physics Symposium Proceedings. 37th Annual (Cat. No.99CH36296).
The degradation of important transistor parameters related to soft breakdown and hard breakdown were studied. Long and short channel transistors were homogeneously stressed at elevated temperature until soft breakdown or hard breakdown occurred. The