Zobrazeno 1 - 10
of 338
pro vyhledávání: '"T. P. Ma"'
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 8, Pp 935-938 (2020)
This work presents the design and experimental demonstration of a novel dual-storage-port nonvolatile SRAM based on back-end-of-the-line processed Hf0.5Zr0.5O2-based metal-ferroelectric-metal capacitors, which offers significant advantages over the c
Externí odkaz:
https://doaj.org/article/0708b508deff41c5bf48e7b27902a1c1
Akademický článek
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Akademický článek
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Publikováno v:
Кубанский научный медицинский вестник, Vol 31, Iss 5, Pp 26-40 (2024)
Background. Angiogenesis plays a crucial role in the progression of breast cancer. Identifying and investigating the key components of this process, focused on phenotype as well as microenvironment of the tumor, is considered highly relevant for unde
Externí odkaz:
https://doaj.org/article/e09114aa41da4d42b76b2a6de7b12ad8
Publikováno v:
Успехи молекулярной онкологии, Vol 11, Iss 3, Pp 103-113 (2024)
Aim. Тo study the molecular genetic characteristics of the tumor microenvironment and the mechanisms of cell death in resistant locally advanced breast cancer.Materials and methods. The study included 48 patients with breast cancer T2–4N0–3M0–
Externí odkaz:
https://doaj.org/article/2c872a34dd7148b494fd98129eca2dcc
Publikováno v:
IEEE Electron Device Letters. 41:1492-1495
Apparent ‘Negative Capacitance’ (NC) effects have been observed in some ferroelectric-dielectric (FE-DE) bilayers by pulse measurements, and the associated results have been published that claim to be direct evidence to support the quasi-static
Publikováno v:
IEEE Electron Device Letters. 41:1348-1351
An optimization principle for ferroelectric FET (FeFET), centered around charge matching between the ferroelectric and its underlying semiconductor, is theoretically investigated. This letter shows that, by properly reducing the ferroelectric polariz
Publikováno v:
2021 IEEE International Electron Devices Meeting (IEDM).
Publikováno v:
2020 IEEE International Memory Workshop (IMW).
This work presents the results of our study of Back-End-of-Line (BEOL)-processed Hf 0.5 Zr 0.5 O 2 (HZO)-based Metal-Ferroelectric-Metal (MFM) capacitors fabricated at temperatures never exceeding 400 0C, and over a wide range of areas (10˗2 to 103
Publikováno v:
Омский научный вестник, Vol 4 (188), Pp 162-168 (2023)
The paper presents the results of laboratory experiments to study the parameters of the gas environment during the combustion of wood, rubber and plastic under conditions that exclude oxygen access to the reaction area. A laboratory bench has been
Externí odkaz:
https://doaj.org/article/ea750d83ead544dba00c95ca52bd3c40